English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | * |
| 包裹: | Bulk |
| 零件状态: | Active |
| 场效应管类型: | - |
| 技术: | - |
| 漏源电压 (vdss): | - |
| 电流 - 连续漏极 (id) @ 25°c: | - |
| 驱动电压（最大 rds on，最小 rds on）: | - |
| rds on (max) @ id, vgs: | - |
| vgs(th) (最大值) @ id: | - |
| 栅极电荷 (qg) (max) @ vgs: | - |
| vgs (最大值): | - |
| 输入电容 (ciss) (max) @ vds: | - |
| 场效应管特征: | - |
| 功耗（最大值）: | - |
| 工作温度: | - |
| 安装类型: | - |
| 供应商设备包: | - |
| 包/箱: | - |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
STS6P3LLH6STMicroelectronics |
MOSFET P-CH 30V 6A 8SO |
|
IXFX180N25TWickmann / Littelfuse |
MOSFET N-CH 250V 180A PLUS247-3 |
|
STB80NF55-06-1STMicroelectronics |
MOSFET N-CH 55V 80A I2PAK |
|
SI4434ADY-T1-GE3Vishay / Siliconix |
MOSFET N-CH 250V 2.8A/4.1A 8SO |
|
NVMFS5C410NLAFT3GSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 40V 50A/330A 5DFN |
|
RM11N800T2Rectron USA |
MOSFET N-CH 800V 11A TO220-3 |
|
BSZ076N06NS3GATMA1Rochester Electronics |
MOSFET N-CH 60V 20A TSDSON-8 |
|
MTD3N25ERochester Electronics |
N-CHANNEL POWER MOSFET |
|
IPD30N03S4L14ATMA1IR (Infineon Technologies) |
MOSFET N-CH 30V 30A TO252-3 |
|
STF12N50M2STMicroelectronics |
MOSFET N-CH 500V 10A TO220FP |
|
FDN028N20Sanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 20V 6.1A SUPERSOT3 |
|
R6003KND3TL1ROHM Semiconductor |
MOSFET N-CH 600V 3A TO252 |
|
STW30N65M5STMicroelectronics |
MOSFET N-CH 650V 22A TO247-3 |
