RES 246K OHM 0.05% 1/4W 1206
MOSFET N-CH 60V 10.9A/62A TO220
类型 | 描述 |
---|---|
系列: | PowerTrench® |
包裹: | Tube |
零件状态: | Obsolete |
场效应管类型: | N-Channel |
技术: | MOSFET (Metal Oxide) |
漏源电压 (vdss): | 60 V |
电流 - 连续漏极 (id) @ 25°c: | 10.9A (Ta), 62A (Tc) |
驱动电压(最大 rds on,最小 rds on): | 6V, 10V |
rds on (max) @ id, vgs: | 13.5mOhm @ 62A, 10V |
vgs(th) (最大值) @ id: | 4V @ 250µA |
栅极电荷 (qg) (max) @ vgs: | 29 nC @ 10 V |
vgs (最大值): | ±20V |
输入电容 (ciss) (max) @ vds: | 1.35 pF @ 25 V |
场效应管特征: | - |
功耗(最大值): | 115W (Tc) |
工作温度: | -55°C ~ 175°C (TJ) |
安装类型: | Through Hole |
供应商设备包: | TO-220-3 |
包/箱: | TO-220-3 |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
PMZB380XN,315Rochester Electronics |
MOSFET N-CH 30V 930MA DFN1006B-3 |
|
SIA456DJ-T1-GE3Vishay / Siliconix |
MOSFET N-CH 200V 2.6A PPAK SC70 |
|
STD65N3LLH5STMicroelectronics |
MOSFET N CH 30V 65A DPAK |
|
MTB6N60E1Rochester Electronics |
N-CHANNEL POWER MOSFET |
|
FDP030N06B-F102Sanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 60V 120A TO220-3 |
|
STF7N90K5STMicroelectronics |
MOSFET N-CH 900V 7A TO220FP |
|
IXFB82N60PWickmann / Littelfuse |
MOSFET N-CH 600V 82A PLUS264 |
|
STB10N60M2STMicroelectronics |
MOSFET N-CH 600V 7.5A D2PAK |
|
IXFN82N60PWickmann / Littelfuse |
MOSFET N-CH 600V 72A SOT-227B |
|
IPS60R1K5CEAKMA1IR (Infineon Technologies) |
CONSUMER |
|
IRFSL3607PBFRochester Electronics |
HEXFET POWER MOSFET |
|
IRF6668TRPBFIR (Infineon Technologies) |
MOSFET N-CH 80V 55A DIRECTFET MZ |
|
STL30N10F7STMicroelectronics |
MOSFET N-CH 100V 30A POWERFLAT |