English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | U-MOSIX-H |
| 包裹: | Tape & Reel (TR)Cut Tape (CT) |
| 零件状态: | Active |
| 场效应管类型: | N-Channel |
| 技术: | MOSFET (Metal Oxide) |
| 漏源电压 (vdss): | 60 V |
| 电流 - 连续漏极 (id) @ 25°c: | 260A (Tc) |
| 驱动电压（最大 rds on，最小 rds on）: | 4.5V, 10V |
| rds on (max) @ id, vgs: | 1.29mOhm @ 50A, 10V |
| vgs(th) (最大值) @ id: | 2.5V @ 1mA |
| 栅极电荷 (qg) (max) @ vgs: | 91 nC @ 10 V |
| vgs (最大值): | ±20V |
| 输入电容 (ciss) (max) @ vds: | 8100 pF @ 30 V |
| 场效应管特征: | - |
| 功耗（最大值）: | 960mW (Ta), 170W (Tc) |
| 工作温度: | 175°C |
| 安装类型: | Surface Mount |
| 供应商设备包: | 8-DSOP Advance |
| 包/箱: | 8-PowerVDFN |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
BF5020WE6327Rochester Electronics |
N-CHANNEL POWER MOSFET |
|
TK30A06N1,S4XToshiba Electronic Devices and Storage Corporation |
MOSFET N-CH 60V 30A TO220SIS |
|
FQA34N20LRochester Electronics |
MOSFET N-CH 200V 34A TO3P |
|
RM40N100LDRectron USA |
MOSFET N-CH 100V 40A TO252-2 |
|
SIHA21N65EF-E3Vishay / Siliconix |
MOSFET N-CH 650V 21A TO220 |
|
FQD4P25TFRochester Electronics |
MOSFET P-CH 250V 3.1A DPAK |
|
BSC042NE7NS3GATMA1IR (Infineon Technologies) |
MOSFET N-CH 75V 19A/100A TDSON |
|
STB9NK60ZT4STMicroelectronics |
MOSFET N-CH 600V 7A D2PAK |
|
NTMFS4C025NT1GSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 30V 20A/69A 5DFN |
|
FCPF380N60Sanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 600V 10.2A TO220F |
|
SFW9530TMRochester Electronics |
MOSFET P-CH 100V 10.5A D2PAK |
|
EPC2023EPC |
GANFET N-CH 30V 60A DIE |
|
IPB136N08N3GATMA1Rochester Electronics |
N-CHANNEL POWER MOSFET |
