English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | PowerTrench® |
| 包裹: | Tape & Reel (TR)Cut Tape (CT) |
| 零件状态: | Active |
| 场效应管类型: | N-Channel |
| 技术: | MOSFET (Metal Oxide) |
| 漏源电压 (vdss): | 150 V |
| 电流 - 连续漏极 (id) @ 25°c: | 4.6A (Ta), 16A (Tc) |
| 驱动电压（最大 rds on，最小 rds on）: | 6V, 10V |
| rds on (max) @ id, vgs: | 51mOhm @ 4.6A, 10V |
| vgs(th) (最大值) @ id: | 4V @ 250µA |
| 栅极电荷 (qg) (max) @ vgs: | 15 nC @ 10 V |
| vgs (最大值): | ±20V |
| 输入电容 (ciss) (max) @ vds: | 905 pF @ 75 V |
| 场效应管特征: | - |
| 功耗（最大值）: | 2.3W (Ta), 40W (Tc) |
| 工作温度: | -55°C ~ 150°C (TJ) |
| 安装类型: | Surface Mount |
| 供应商设备包: | 8-MLP (3.3x3.3) |
| 包/箱: | 8-PowerWDFN |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
SCTW35N65G2VAGSTMicroelectronics |
SICFET N-CH 650V 45A HIP247 |
|
SI7461DP-T1-GE3Vishay / Siliconix |
MOSFET P-CH 60V 8.6A PPAK SO-8 |
|
SIR880ADP-T1-GE3Vishay / Siliconix |
MOSFET N-CH 80V 60A PPAK SO-8 |
|
PMN25UN,115Rochester Electronics |
MOSFET N-CH 20V 6A 6TSOP |
|
STD7N65M6STMicroelectronics |
MOSFET N-CH 650V 5A DPAK |
|
SIHF540S-GE3Vishay / Siliconix |
MOSFET N-CH 100V 28A D2PAK |
|
TK6A55DA(STA4,Q,M)Toshiba Electronic Devices and Storage Corporation |
MOSFET N-CH 550V 5.5A TO220SIS |
|
BSH203,215Nexperia |
MOSFET P-CH 30V 470MA TO236AB |
|
APT50M75LFLLGRoving Networks / Microchip Technology |
MOSFET N-CH 500V 57A TO264 |
|
SIRA90DP-T1-RE3Vishay / Siliconix |
MOSFET N-CH 30V 100A PPAK SO-8 |
|
R6030KNXROHM Semiconductor |
MOSFET N-CH 600V 30A TO220FM |
|
SPD02N50C3Rochester Electronics |
MOSFET N-CH 560V 1.8A TO252-3 |
|
BSC0804LSATMA1IR (Infineon Technologies) |
100V, N-CH MOSFET, LOGIC LEVEL, |
