MOSFET P-CH 30V 12A 8SOIC
CABLE GLAND 4-8MM PG9 POLYAMIDE
类型 | 描述 |
---|---|
系列: | - |
包裹: | Tape & Reel (TR)Cut Tape (CT) |
零件状态: | Not For New Designs |
场效应管类型: | P-Channel |
技术: | MOSFET (Metal Oxide) |
漏源电压 (vdss): | 30 V |
电流 - 连续漏极 (id) @ 25°c: | 12A (Ta) |
驱动电压(最大 rds on,最小 rds on): | 6V, 20V |
rds on (max) @ id, vgs: | 11mOhm @ 12A, 20V |
vgs(th) (最大值) @ id: | 3V @ 250µA |
栅极电荷 (qg) (max) @ vgs: | 39 nC @ 10 V |
vgs (最大值): | ±25V |
输入电容 (ciss) (max) @ vds: | 2600 pF @ 15 V |
场效应管特征: | - |
功耗(最大值): | 3.1W (Ta) |
工作温度: | -55°C ~ 150°C (TJ) |
安装类型: | Surface Mount |
供应商设备包: | 8-SOIC |
包/箱: | 8-SOIC (0.154", 3.90mm Width) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
![]() |
RM135N100HDRectron USA |
MOSFET N-CH 100V 135A TO263-2 |
![]() |
IPP60R080P7XKSA1IR (Infineon Technologies) |
MOSFET N-CH 650V 37A TO220-3 |
![]() |
STP34NM60NSTMicroelectronics |
MOSFET N-CH 600V 29A TO220-3 |
![]() |
UF3C120040K4SUnitedSiC |
SICFET N-CH 1200V 65A TO247-4 |
![]() |
NTMFS5C404NLTT3GSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 40V 5DFN |
![]() |
IXTX600N04T2Wickmann / Littelfuse |
MOSFET N-CH 40V 600A PLUS247-3 |
![]() |
NVMFS5C404NWFAFT1GSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 40V 53A/378A 5DFN |
![]() |
IRF200B211IR (Infineon Technologies) |
MOSFET N-CH 200V 12A TO220AB |
![]() |
FDPF3860TSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 100V 20A TO220F |
![]() |
SIR424DP-T1-GE3Vishay / Siliconix |
MOSFET N-CH 20V 30A PPAK SO-8 |
![]() |
RQ6C050BCTCRROHM Semiconductor |
MOSFET P-CH 20V 5A TSMT6 |
![]() |
APT5018BFLLGRoving Networks / Microchip Technology |
MOSFET N-CH 500V 27A TO247 |
![]() |
NTTFS4985NFTWGRochester Electronics |
MOSFET N-CH 30V 16.3A/64A 8WDFN |