English
简体中文
MOSFET N-CH 650V 9A TO220FP
CONN RCPT 16POS IDC 26-28AWG
BOX ALUM BLACK 13.07"L X 9.13"W
IC EEPROM 8KBIT I2C 1MHZ 8TSSOP
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | MDmesh™ V |
| 包裹: | Tube |
| 零件状态: | Active |
| 场效应管类型: | N-Channel |
| 技术: | MOSFET (Metal Oxide) |
| 漏源电压 (vdss): | 650 V |
| 电流 - 连续漏极 (id) @ 25°c: | 9A (Tc) |
| 驱动电压（最大 rds on，最小 rds on）: | 10V |
| rds on (max) @ id, vgs: | 480mOhm @ 4.5A, 10V |
| vgs(th) (最大值) @ id: | 5V @ 250µA |
| 栅极电荷 (qg) (max) @ vgs: | 17 nC @ 10 V |
| vgs (最大值): | ±25V |
| 输入电容 (ciss) (max) @ vds: | 644 pF @ 100 V |
| 场效应管特征: | - |
| 功耗（最大值）: | 25W (Tc) |
| 工作温度: | 150°C (TJ) |
| 安装类型: | Through Hole |
| 供应商设备包: | TO-220FP |
| 包/箱: | TO-220-3 Full Pack |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
SPD15P10PGRochester Electronics |
SPD15P10 - 20V-250V P-CHANNEL PO |
|
IRFSL3006PBFIR (Infineon Technologies) |
MOSFET N-CH 60V 195A TO262 |
|
NVMFS5C628NLAFT1GSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 60V 28A/150A 5DFN |
|
PSMN1R0-40YSHXNexperia |
MOSFET N-CH 40V 290A LFPAK56 |
|
FDMS7698Rochester Electronics |
POWER FIELD-EFFECT TRANSISTOR, 1 |
|
IRFP344Vishay / Siliconix |
MOSFET N-CH 450V 9.5A TO247-3 |
|
BSC019N04NSGATMA1IR (Infineon Technologies) |
MOSFET N-CH 40V 30A/100A TDSON |
|
DMN3071LFR4-7RZetex Semiconductors (Diodes Inc.) |
MOSFET N-CH 30V 3.4A 3DFN |
|
MTB29N15ET4Rochester Electronics |
N-CHANNEL POWER MOSFET |
|
AONR21307Alpha and Omega Semiconductor, Inc. |
MOSFET P-CH 30V 24A 8DFN |
|
IPS105N03LGAKMA1Rochester Electronics |
MOSFET N-CH 30V 35A TO251-3 |
|
XPH3R206NC,L1XHQToshiba Electronic Devices and Storage Corporation |
MOSFET N-CH 60V 70A 8SOP |
|
HUFA76645S3STRochester Electronics |
MOSFET N-CH 100V 75A D2PAK |