English
简体中文
FIXED IND 2.5NH 500MA 200 MOHM
CRYSTAL 32.0000MHZ 18PF SMD
SWITCH TOGGLE SPDT 5A 120V
MOSFET N-CH 200V 4.8A TO220F
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | QFET® |
| 包裹: | Tube |
| 零件状态: | Obsolete |
| 场效应管类型: | N-Channel |
| 技术: | MOSFET (Metal Oxide) |
| 漏源电压 (vdss): | 200 V |
| 电流 - 连续漏极 (id) @ 25°c: | 4.8A (Tc) |
| 驱动电压（最大 rds on，最小 rds on）: | 10V |
| rds on (max) @ id, vgs: | 690mOhm @ 2.4A, 10V |
| vgs(th) (最大值) @ id: | 5V @ 250µA |
| 栅极电荷 (qg) (max) @ vgs: | 10 nC @ 10 V |
| vgs (最大值): | ±30V |
| 输入电容 (ciss) (max) @ vds: | 400 pF @ 25 V |
| 场效应管特征: | - |
| 功耗（最大值）: | 37W (Tc) |
| 工作温度: | -55°C ~ 150°C (TJ) |
| 安装类型: | Through Hole |
| 供应商设备包: | TO-220F |
| 包/箱: | TO-220-3 Full Pack |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
CSD25480F3Texas Instruments |
MOSFET P-CH 20V 1.7A 3PICOSTAR |
|
SQJ416EP-T1_GE3Vishay / Siliconix |
MOSFET N-CH 100V 27A PPAK SO-8 |
|
IRFS3107TRL7PPIR (Infineon Technologies) |
MOSFET N-CH 75V 240A D2PAK |
|
AUIRFSL4310Rochester Electronics |
AUTOMOTIVE POWER MOSFET |
|
IPSA70R750P7SAKMA1IR (Infineon Technologies) |
MOSFET N-CH 700V 6.5A TO251-3 |
|
TSM2N7000KCT B0GTSC (Taiwan Semiconductor) |
MOSFET N-CHANNEL 60V 300MA TO92 |
|
IPP60R180P7XKSA1IR (Infineon Technologies) |
MOSFET N-CH 650V 18A TO220-3 |
|
STB10LN80K5STMicroelectronics |
MOSFET N-CHANNEL 800V 8A D2PAK |
|
PMN50UPE,115Rochester Electronics |
MOSFET P-CH 20V 3.6A 6TSOP |
|
STB80NF55-08AGSTMicroelectronics |
MOSFET N-CHANNEL 55V 80A D2PAK |
|
IPL65R070C7AUMA1IR (Infineon Technologies) |
MOSFET N-CH 650V 28A 4VSON |
|
IPD50N04S4-08Rochester Electronics |
IPD50N04 - 20V-40V N-CHANNEL AUT |
|
FDD8750Rochester Electronics |
MOSFET N-CH 25V 6.5A/2.7A DPAK |