English
简体中文
CAP CER 15PF 100V C0G/NP0 0603
MOSFET N-CH 100V 8.9A 8SO
BRIDGE RECT 1PHASE 600V 1.5A
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | Automotive, AEC-Q101 |
| 包裹: | Tape & Reel (TR) |
| 零件状态: | Active |
| 场效应管类型: | N-Channel |
| 技术: | MOSFET (Metal Oxide) |
| 漏源电压 (vdss): | 100 V |
| 电流 - 连续漏极 (id) @ 25°c: | 8.9A (Ta) |
| 驱动电压（最大 rds on，最小 rds on）: | 4.5V, 10V |
| rds on (max) @ id, vgs: | 15mOhm @ 20A, 10V |
| vgs(th) (最大值) @ id: | 3V @ 250µA |
| 栅极电荷 (qg) (max) @ vgs: | 33.3 nC @ 10 V |
| vgs (最大值): | ±20V |
| 输入电容 (ciss) (max) @ vds: | 1871 pF @ 50 V |
| 场效应管特征: | - |
| 功耗（最大值）: | 1.2W (Ta) |
| 工作温度: | -55°C ~ 150°C (TJ) |
| 安装类型: | Surface Mount |
| 供应商设备包: | 8-SO |
| 包/箱: | 8-SOIC (0.154", 3.90mm Width) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
HUF75329S3Rochester Electronics |
MOSFET N-CH 55V 49A D2PAK |
|
NTD5802NT4GRochester Electronics |
POWER FIELD-EFFECT TRANSISTOR, 1 |
|
IPB65R310CFDAATMA1IR (Infineon Technologies) |
MOSFET N-CH 650V 11.4A D2PAK |
|
FDMS4D0N12CSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 120V 18.5A/114A 8QFN |
|
AUIRFS8403TRRRochester Electronics |
MOSFET N-CH 40V 123A D2PAK |
|
SUD23N06-31L-T4BE3Vishay / Siliconix |
MOSFET N-CH 60V 9.1A/21.4A DPAK |
|
FDD8880Sanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 30V 13A/58A TO252AA |
|
IPW60R125C6FKSA1IR (Infineon Technologies) |
MOSFET N-CH 600V 30A TO247-3 |
|
FQB5P10TMRochester Electronics |
MOSFET P-CH 100V 4.5A D2PAK |
|
DMP21D2UFA-7BZetex Semiconductors (Diodes Inc.) |
MOSFET P-CH 20V 330MA 3DFN |
|
AUIRFP2907ZRochester Electronics |
MOSFET N-CH 75V 170A TO247AC |
|
STD9N80K5STMicroelectronics |
MOSFET N-CHANNEL 800V 7A DPAK |
|
SIRA50ADP-T1-RE3Vishay / Siliconix |
MOSFET N-CH 40V 54.8A/219A PPAK |