TVS DIODE 18.8V 30.6V DO204AL
MOSFET P-CH 50V 130MA SOT23-3
类型 | 描述 |
---|---|
系列: | - |
包裹: | Tape & Reel (TR)Cut Tape (CT) |
零件状态: | Active |
场效应管类型: | P-Channel |
技术: | MOSFET (Metal Oxide) |
漏源电压 (vdss): | 50 V |
电流 - 连续漏极 (id) @ 25°c: | 130mA (Ta) |
驱动电压(最大 rds on,最小 rds on): | 5V |
rds on (max) @ id, vgs: | 10Ohm @ 100mA, 5V |
vgs(th) (最大值) @ id: | 2V @ 250µA |
栅极电荷 (qg) (max) @ vgs: | 2.2 nC @ 10 V |
vgs (最大值): | ±20V |
输入电容 (ciss) (max) @ vds: | 36 pF @ 5 V |
场效应管特征: | - |
功耗(最大值): | 225mW (Ta) |
工作温度: | -55°C ~ 150°C (TJ) |
安装类型: | Surface Mount |
供应商设备包: | SOT-23-3 |
包/箱: | TO-236-3, SC-59, SOT-23-3 |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
AUIRLS3034-7PRochester Electronics |
AUTOMOTIVE HEXFET N-CHANNEL |
|
AOK29S50LAlpha and Omega Semiconductor, Inc. |
MOSFET N-CH 500V 29A TO247 |
|
FQU4N25TURochester Electronics |
MOSFET N-CH 250V 3A IPAK |
|
STS12N3LLH5STMicroelectronics |
MOSFET N-CH 30V 12A 8SO |
|
FQD17N08LTFRochester Electronics |
MOSFET N-CH 80V 12.9A TO252 |
|
TSM160P02CS RLGTSC (Taiwan Semiconductor) |
MOSFET P-CHANNEL 20V 11A 8SOP |
|
PMV16UN,215Rochester Electronics |
SMALL SIGNAL FIELD-EFFECT TRANSI |
|
SIHG24N65E-E3Vishay / Siliconix |
MOSFET N-CH 650V 24A TO247AC |
|
ATP113-TL-HSanyo Semiconductor/ON Semiconductor |
MOSFET P-CH 60V 35A ATPAK |
|
FDC86244Sanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 150V 2.3A SUPERSOT6 |
|
SIE822DF-T1-GE3Vishay / Siliconix |
MOSFET N-CH 20V 50A 10POLARPAK |
|
STF16N90K5STMicroelectronics |
MOSFET N-CH 900V 15A TO220FP |
|
SI2333CDS-T1-GE3Vishay / Siliconix |
MOSFET P-CH 12V 7.1A SOT23-3 |