







SWITCH SNAP ACTION SPDT 3A 250V
MOSFET P-CH 30V 6A SOT23F
MOSFET N-CH 55V 80A TO262-3
BOX S STEEL NATURAL 48"L X 38"W
| 类型 | 描述 |
|---|---|
| 系列: | OptiMOS™ |
| 包裹: | Tube |
| 零件状态: | Obsolete |
| 场效应管类型: | N-Channel |
| 技术: | MOSFET (Metal Oxide) |
| 漏源电压 (vdss): | 55 V |
| 电流 - 连续漏极 (id) @ 25°c: | 80A (Tc) |
| 驱动电压(最大 rds on,最小 rds on): | 5V, 10V |
| rds on (max) @ id, vgs: | 7.9mOhm @ 43A, 10V |
| vgs(th) (最大值) @ id: | 2.2V @ 55µA |
| 栅极电荷 (qg) (max) @ vgs: | 134 nC @ 10 V |
| vgs (最大值): | ±16V |
| 输入电容 (ciss) (max) @ vds: | 6.475 pF @ 25 V |
| 场效应管特征: | - |
| 功耗(最大值): | 105W (Tc) |
| 工作温度: | -55°C ~ 175°C (TJ) |
| 安装类型: | Through Hole |
| 供应商设备包: | PG-TO262-3 |
| 包/箱: | TO-262-3 Long Leads, I²Pak, TO-262AA |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
|
|
STD3NK60ZT4STMicroelectronics |
MOSFET N-CH 600V 2.4A DPAK |
|
|
NX7002BKRNexperia |
MOSFET N-CH 60V 270MA TO236AB |
|
|
HUF75339P3Rochester Electronics |
MOSFET N-CH 55V 75A TO220-3 |
|
|
IPD50R399CPATMA1IR (Infineon Technologies) |
LOW POWER_LEGACY |
|
|
PSMN1R5-30YL,115Nexperia |
MOSFET N-CH 30V 100A LFPAK56 |
|
|
NTB75N06GRochester Electronics |
MOSFET N-CH 60V 75A D2PAK |
|
|
CSD17301Q5ATexas Instruments |
MOSFET N-CH 30V 28A/100A 8VSON |
|
|
IRFU310PBFVishay / Siliconix |
MOSFET N-CH 400V 1.7A TO251AA |
|
|
BSC014N03MSGATMA1Rochester Electronics |
PFET, 30A I(D), 30V, 0.00175OHM, |
|
|
STP2NK90ZSTMicroelectronics |
MOSFET N-CH 900V 2.1A TO220AB |
|
|
STL26NM60NSTMicroelectronics |
MOSFET N-CH 600V 19A POWERFLAT |
|
|
RQ7L050ATTCRROHM Semiconductor |
PCH -60V -5A SMALL SIGNAL POWER |
|
|
FDFMA2P859TRochester Electronics |
MOSFET P-CH 20V 3A MICROFET |