类型 | 描述 |
---|---|
系列: | * |
包裹: | Bulk |
零件状态: | Active |
场效应管类型: | - |
技术: | - |
漏源电压 (vdss): | - |
电流 - 连续漏极 (id) @ 25°c: | - |
驱动电压(最大 rds on,最小 rds on): | - |
rds on (max) @ id, vgs: | - |
vgs(th) (最大值) @ id: | - |
栅极电荷 (qg) (max) @ vgs: | - |
vgs (最大值): | - |
输入电容 (ciss) (max) @ vds: | - |
场效应管特征: | - |
功耗(最大值): | - |
工作温度: | - |
安装类型: | - |
供应商设备包: | - |
包/箱: | - |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
![]() |
FDMC86340Sanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 80V 14A/48A POWER33 |
![]() |
RQ7E055ATTCRROHM Semiconductor |
MOSFET P-CH 30V 5.5A TSMT8 |
![]() |
FDMS2504SDCRochester Electronics |
MOSFET N-CH 25V 42A/49A DLCOOL56 |
![]() |
FDP8442-F085Rochester Electronics |
23A, 40V, 0.0031OHM, N-CHANNEL, |
![]() |
SI1443EDH-T1-BE3Vishay / Siliconix |
MOSFET P-CH 30V 4A/4A SC70-6 |
![]() |
IMW65R072M1HXKSA1IR (Infineon Technologies) |
MOSFET 650V NCH SIC TRENCH |
![]() |
STL62P3LLH6STMicroelectronics |
MOSFET P-CH 30V 62A POWERFLAT |
![]() |
DMN1004UFV-13Zetex Semiconductors (Diodes Inc.) |
MOSFET N-CH 12V 70A POWERDI3333 |
![]() |
SCT3080AW7TLROHM Semiconductor |
TRANS SJT N-CH 650V 29A TO263-7 |
![]() |
BSP316PH6327XTSA1IR (Infineon Technologies) |
MOSFET P-CH 100V 680MA SOT223-4 |
![]() |
NTLJD3182FZTAGRochester Electronics |
MOSFET P-CH 20V 2.2A 6WDFN |
![]() |
AOT2500LAlpha and Omega Semiconductor, Inc. |
MOSFET N-CH 150V 11.5/152A TO220 |
![]() |
ZVP4424AZetex Semiconductors (Diodes Inc.) |
MOSFET P-CH 240V 200MA TO92-3 |