English
简体中文
FIXED IND 12UH 10.9A 15 MOHM TH
CRYSTAL 38.4000MHZ 8PF SMD
2.5X2.0 30PPM @25C 30PPM (-20 TO
HEXFET POWER MOSFET
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | HEXFET® |
| 包裹: | Bulk |
| 零件状态: | Active |
| 场效应管类型: | N-Channel |
| 技术: | MOSFET (Metal Oxide) |
| 漏源电压 (vdss): | 30 V |
| 电流 - 连续漏极 (id) @ 25°c: | 7.3A (Tc) |
| 驱动电压（最大 rds on，最小 rds on）: | 4.5V, 10V |
| rds on (max) @ id, vgs: | 30mOhm @ 7.3A, 10V |
| vgs(th) (最大值) @ id: | 1V @ 250µA |
| 栅极电荷 (qg) (max) @ vgs: | 28 nC @ 10 V |
| vgs (最大值): | ±20V |
| 输入电容 (ciss) (max) @ vds: | 550 pF @ 25 V |
| 场效应管特征: | - |
| 功耗（最大值）: | 2.5W (Tc) |
| 工作温度: | -55°C ~ 150°C (TJ) |
| 安装类型: | Surface Mount |
| 供应商设备包: | 8-SO |
| 包/箱: | 8-SOIC (0.154", 3.90mm Width) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
ZVNL120GTAZetex Semiconductors (Diodes Inc.) |
MOSFET N-CH 200V 320MA SOT223 |
|
DMTH6004SCTBQ-13Zetex Semiconductors (Diodes Inc.) |
MOSFET N-CH 60V 100A TO263AB |
|
FCA47N60FSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 600V 47A TO3PN |
|
XP162A12A6PR-GTorex Semiconductor Ltd. |
MOSFET P-CH 20V 2.5A SOT89 |
|
AOT9N50Alpha and Omega Semiconductor, Inc. |
MOSFET N-CH 500V 9A TO220 |
|
SI4838DY-T1-E3Vishay / Siliconix |
MOSFET N-CH 12V 17A 8SO |
|
IPB020N04NGATMA1Rochester Electronics |
MOSFET N-CH 40V 140A TO263-7-3 |
|
IXTA130N15X4Wickmann / Littelfuse |
MOSFET N-CH 150V 130A TO263AA |
|
AUIRF4905LRochester Electronics |
AUTOMOTIVE HEXFET P CHANNEL |
|
IPT004N03LATMA1IR (Infineon Technologies) |
MOSFET N-CH 30V 300A 8HSOF |
|
FQPF32N20CSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 200V 28A TO220F |
|
IXFX20N120PWickmann / Littelfuse |
MOSFET N-CH 1200V 20A PLUS247-3 |
|
NTTFS4929NTWGRochester Electronics |
MOSFET N-CH 30V 6.6A/34A 8WDFN |