English
简体中文
MOSFET N-CH 500V 2.1A D2PAK
FERRITE BEAD 1 KOHM 0603 1LN
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | QFET® |
| 包裹: | Bulk |
| 零件状态: | Obsolete |
| 场效应管类型: | N-Channel |
| 技术: | MOSFET (Metal Oxide) |
| 漏源电压 (vdss): | 500 V |
| 电流 - 连续漏极 (id) @ 25°c: | 2.1A (Tc) |
| 驱动电压（最大 rds on，最小 rds on）: | 10V |
| rds on (max) @ id, vgs: | 5.3Ohm @ 1.05A, 10V |
| vgs(th) (最大值) @ id: | 5V @ 250µA |
| 栅极电荷 (qg) (max) @ vgs: | 8 nC @ 10 V |
| vgs (最大值): | ±30V |
| 输入电容 (ciss) (max) @ vds: | 230 pF @ 25 V |
| 场效应管特征: | - |
| 功耗（最大值）: | 3.13W (Ta), 55W (Tc) |
| 工作温度: | -55°C ~ 150°C (TJ) |
| 安装类型: | Surface Mount |
| 供应商设备包: | D²PAK (TO-263AB) |
| 包/箱: | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
RM21N700T2Rectron USA |
MOSFET N-CH 700V 21A TO220-3 |
|
AOTF8N80Alpha and Omega Semiconductor, Inc. |
MOSFET N-CH 800V 7.4A TO220-3F |
|
BSF030NE2LQXUMA1IR (Infineon Technologies) |
MOSFET N-CH 25V 24A/75A 2WDSON |
|
SQS850EN-T1_GE3Vishay / Siliconix |
MOSFET N-CH 60V 12A PPAK1212-8 |
|
IPC100N04S51R7ATMA1IR (Infineon Technologies) |
MOSFET N-CH 40V 100A 8TDSON-34 |
|
IXTL2N470Wickmann / Littelfuse |
MOSFET N-CH 4700V 2A I5PAK |
|
DI110N15PQDiotec Semiconductor |
MOSFET N-CH 150V 110A 8QFN |
|
IRF7480MTRPBFIR (Infineon Technologies) |
MOSFET N-CH 40V 217A DIRECTFET |
|
BSP300L6327HUSA1Rochester Electronics |
MOSFET N-CH 800V 190MA SOT223-4 |
|
FDMC86102LSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 100V 7A/18A 8MLP |
|
DMN2005UFG-13Zetex Semiconductors (Diodes Inc.) |
MOSFET N-CH 20V 18.1A PWRDI3333 |
|
IRFR7740TRPBFIR (Infineon Technologies) |
MOSFET N-CH 75V 87A DPAK |
|
SI7489DP-T1-E3Vishay / Siliconix |
MOSFET P-CH 100V 28A PPAK SO-8 |