English
简体中文
CAP TANT 10UF 10% 35V 2917
MOSFET N-CH 200V 19A D2PAK
PHOTOTRANSISTOR OPTO
629M SERIES RIGHT ANGLE D-SUB PL
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | QFET® |
| 包裹: | Tape & Reel (TR)Cut Tape (CT) |
| 零件状态: | Active |
| 场效应管类型: | N-Channel |
| 技术: | MOSFET (Metal Oxide) |
| 漏源电压 (vdss): | 200 V |
| 电流 - 连续漏极 (id) @ 25°c: | 19A (Tc) |
| 驱动电压（最大 rds on，最小 rds on）: | 10V |
| rds on (max) @ id, vgs: | 170mOhm @ 9.5A, 10V |
| vgs(th) (最大值) @ id: | 4V @ 250µA |
| 栅极电荷 (qg) (max) @ vgs: | 53 nC @ 10 V |
| vgs (最大值): | ±30V |
| 输入电容 (ciss) (max) @ vds: | 1080 pF @ 25 V |
| 场效应管特征: | - |
| 功耗（最大值）: | 3.13W (Ta), 139W (Tc) |
| 工作温度: | -55°C ~ 150°C (TJ) |
| 安装类型: | Surface Mount |
| 供应商设备包: | D²PAK (TO-263AB) |
| 包/箱: | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
IPA65R190CFDXKSA2IR (Infineon Technologies) |
MOSFET N-CH 650V 17.5A TO220 |
|
STB46NF30STMicroelectronics |
MOSFET N-CH 300V 42A D2PAK |
|
NTD4N60T4Rochester Electronics |
N-CHANNEL POWER MOSFET |
|
2N7000Sanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 60V 200MA TO92-3 |
|
AOT10N60Alpha and Omega Semiconductor, Inc. |
MOSFET N-CH 600V 10A TO220 |
|
2SK4145-S19-AYRochester Electronics |
N-CHANNEL POWER MOSFET |
|
ECH8309-TL-HSanyo Semiconductor/ON Semiconductor |
MOSFET P-CH 12V 9.5A 8ECH |
|
IPP50R399CPRochester Electronics |
IPP50R399 - 500V COOLMOS N-CHANN |
|
STP130N6F7STMicroelectronics |
MOSFET N-CH 60V 80A TO220AB |
|
IRFR9214TRLPBFVishay / Siliconix |
MOSFET P-CH 250V 2.7A DPAK |
|
IRF7832PBFRochester Electronics |
HEXFET POWER MOSFET |
|
APT5017SVRGRoving Networks / Microchip Technology |
MOSFET N-CH 500V 30A D3PAK |
|
BSC019N04LSTATMA1IR (Infineon Technologies) |
DIFFERENTIATED MOSFETS |