English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | Automotive, AEC-Q101, HEXFET® |
| 包裹: | Bulk |
| 零件状态: | Active |
| 场效应管类型: | N-Channel |
| 技术: | MOSFET (Metal Oxide) |
| 漏源电压 (vdss): | 100 V |
| 电流 - 连续漏极 (id) @ 25°c: | 42A (Tc) |
| 驱动电压（最大 rds on，最小 rds on）: | - |
| rds on (max) @ id, vgs: | 14mOhm @ 38A, 10V |
| vgs(th) (最大值) @ id: | 2.5V @ 100µA |
| 栅极电荷 (qg) (max) @ vgs: | 48 nC @ 4.5 V |
| vgs (最大值): | ±16V |
| 输入电容 (ciss) (max) @ vds: | 3980 pF @ 25 V |
| 场效应管特征: | - |
| 功耗（最大值）: | 140W (Tc) |
| 工作温度: | -55°C ~ 175°C (TJ) |
| 安装类型: | Surface Mount |
| 供应商设备包: | D-Pak |
| 包/箱: | TO-252-3, DPak (2 Leads + Tab), SC-63 |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
STD11N65M5STMicroelectronics |
MOSFET N CH 650V 9A DPAK |
|
SIHH21N65EF-T1-GE3Vishay / Siliconix |
MOSFET N-CH 650V 19.8A PPAK 8X8 |
|
SI1302DL-T1-GE3Vishay / Siliconix |
MOSFET N-CH 30V 600MA SC70-3 |
|
IRFR310TRPBFVishay / Siliconix |
MOSFET N-CH 400V 1.7A DPAK |
|
APT36N90BC3GMicrosemi |
MOSFET N-CH 900V 36A TO247 |
|
STU6NF10STMicroelectronics |
MOSFET N-CH 100V 6A IPAK |
|
CSD17581Q3ATTexas Instruments |
MOSFET N-CH 30V 60A 8VSON |
|
DMN601WKQ-13Zetex Semiconductors (Diodes Inc.) |
MOSFET N-CH 60V SOT323 |
|
IPD70N12S3L12ATMA1IR (Infineon Technologies) |
MOSFET N-CHANNEL_100+ |
|
AON7568Alpha and Omega Semiconductor, Inc. |
MOSFET N-CH 30V 25A/32A 8DFN |
|
2N7002K-TPMicro Commercial Components (MCC) |
MOSFET N-CH 60V 340MA SOT23 |
|
PHP9NQ20T,127Rochester Electronics |
NOW NEXPERIA PHP9NQ20T - 8.7A, 2 |
|
FDMA86151LSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 100V 3.3A 6MICROFET |
