English
简体中文
MEMS OSC XO 66.6660MHZ LVCMOS LV
MOSFET P-CH 20V 4.5A 6TDFN
MINI MEGAPAC
TOUCH SCREEN CAPACITIVE 15.65"
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Tape & Reel (TR)Cut Tape (CT) |
| 零件状态: | Active |
| 场效应管类型: | P-Channel |
| 技术: | MOSFET (Metal Oxide) |
| 漏源电压 (vdss): | 20 V |
| 电流 - 连续漏极 (id) @ 25°c: | 4.5A (Ta) |
| 驱动电压（最大 rds on，最小 rds on）: | 1.8V, 4.5V |
| rds on (max) @ id, vgs: | 94mOhm @ 2.8A, 4.5V |
| vgs(th) (最大值) @ id: | 500mV @ 250µA |
| 栅极电荷 (qg) (max) @ vgs: | 4.5 nC @ 4.5 V |
| vgs (最大值): | ±12V |
| 输入电容 (ciss) (max) @ vds: | 5.2 pF @ 6 V |
| 场效应管特征: | - |
| 功耗（最大值）: | 6.5W (Tc) |
| 工作温度: | -55°C ~ 150°C (TJ) |
| 安装类型: | Surface Mount |
| 供应商设备包: | 6-TDFN (2x2) |
| 包/箱: | 6-VDFN Exposed Pad |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
IPD90N10S4L06ATMA1IR (Infineon Technologies) |
MOSFET N-CH 100V 90A TO252-3 |
|
UPA1724G-E1-ARochester Electronics |
N-CHANNEL POWER MOSFET |
|
FDD6606Rochester Electronics |
MOSFET N-CH 30V 75A DPAK |
|
PSMN8R5-100ESQRochester Electronics |
POWER FIELD-EFFECT TRANSISTOR, 1 |
|
MTM761110LBFPanasonic |
MOSFET P-CH 12V 4A WSMINI6 |
|
FCH067N65S3-F155Sanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 650V 44A TO247 |
|
AOTS21319CAlpha and Omega Semiconductor, Inc. |
MOSFET P-CH 30V 2.7A 6TSOP |
|
ISL9N306AD3STRochester Electronics |
N-CHANNEL POWER MOSFET |
|
SI3459BDV-T1-E3Vishay / Siliconix |
MOSFET P-CH 60V 2.9A 6TSOP |
|
RFD3055Rochester Electronics |
MOSFET N-CH 60V 12A IPAK |
|
FDU6682_NLRochester Electronics |
N-CHANNEL POWER MOSFET |
|
AONR32320CAlpha and Omega Semiconductor, Inc. |
MOSFET N-CH 30V 9.5A/12A 8DFN |
|
IRFP260NPBFIR (Infineon Technologies) |
MOSFET N-CH 200V 50A TO247AC |