







EMITTER IR 940NM 1A SMD
MOSFET P-CHANNEL 20V 2A TO236AB
DIODE SCHOTTKY 100V 2A SUB SMA
PHOTOELECTRIC DISTANCE SENSOR; N
| 类型 | 描述 |
|---|---|
| 系列: | Automotive, AEC-Q101 |
| 包裹: | Tape & Reel (TR) |
| 零件状态: | Active |
| 场效应管类型: | P-Channel |
| 技术: | MOSFET (Metal Oxide) |
| 漏源电压 (vdss): | 20 V |
| 电流 - 连续漏极 (id) @ 25°c: | 2A (Ta) |
| 驱动电压(最大 rds on,最小 rds on): | 1.8V, 4.5V |
| rds on (max) @ id, vgs: | 120mOhm @ 1A, 4.5V |
| vgs(th) (最大值) @ id: | 1.1V @ 250µA |
| 栅极电荷 (qg) (max) @ vgs: | 6 nC @ 4.5 V |
| vgs (最大值): | ±8V |
| 输入电容 (ciss) (max) @ vds: | 380 pF @ 6 V |
| 场效应管特征: | - |
| 功耗(最大值): | 400mW (Ta) |
| 工作温度: | 150°C (TJ) |
| 安装类型: | Surface Mount |
| 供应商设备包: | TO-236AB |
| 包/箱: | TO-236-3, SC-59, SOT-23-3 |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
|
|
SI7104DN-T1-GE3Vishay / Siliconix |
MOSFET N-CH 12V 35A PPAK 1212-8 |
|
|
AOD1N60Alpha and Omega Semiconductor, Inc. |
MOSFET N-CH 600V 1.3A TO252 |
|
|
NVMFS5C466NWFT1GSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 40V 15A/49A 5DFN |
|
|
MCH5837-TL-ERochester Electronics |
MOSFET N-CH 20V 2A 5MCPH |
|
|
C3M0065090DWolfspeed - a Cree company |
SICFET N-CH 900V 36A TO247-3 |
|
|
STW9NK95ZSTMicroelectronics |
MOSFET N-CH 950V 7A TO247 |
|
|
FDS4410Rochester Electronics |
MOSFET N-CH 30V 10A 8SOIC |
|
|
ISS55EP06LMXTSA1IR (Infineon Technologies) |
MOSFET P-CH 60V 180MA SOT23-3 |
|
|
BSS87,115Nexperia |
MOSFET N-CH 200V 400MA SOT89 |
|
|
SQD15N06-42L_GE3Vishay / Siliconix |
MOSFET N-CH 60V 15A TO252 |
|
|
APL502JRoving Networks / Microchip Technology |
MOSFET N-CH 500V 52A ISOTOP |
|
|
FQPF12N60Rochester Electronics |
MOSFET N-CH 600V 5.8A TO220F |
|
|
RMA7P20ED1Rectron USA |
MOSFET P-CH 20V 700MA DFN1006-3 |