English
简体中文
CRYSTAL 48.0000MHZ 4PF SMD
60X60X25MM 12V DC FAN
MOSFET N-CH 200V 15A TO220AB
WIRE STRIPPER AIE M-SPX 1.5-6.0
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | MESH OVERLAY™ |
| 包裹: | Tube |
| 零件状态: | Active |
| 场效应管类型: | N-Channel |
| 技术: | MOSFET (Metal Oxide) |
| 漏源电压 (vdss): | 200 V |
| 电流 - 连续漏极 (id) @ 25°c: | 15A (Tc) |
| 驱动电压（最大 rds on，最小 rds on）: | 10V |
| rds on (max) @ id, vgs: | 160mOhm @ 7.5A, 10V |
| vgs(th) (最大值) @ id: | 4V @ 250µA |
| 栅极电荷 (qg) (max) @ vgs: | 24 nC @ 10 V |
| vgs (最大值): | ±20V |
| 输入电容 (ciss) (max) @ vds: | 800 pF @ 25 V |
| 场效应管特征: | - |
| 功耗（最大值）: | 90W (Tc) |
| 工作温度: | -55°C ~ 150°C (TJ) |
| 安装类型: | Through Hole |
| 供应商设备包: | TO-220AB |
| 包/箱: | TO-220-3 |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
APT8065BVRGRoving Networks / Microchip Technology |
MOSFET N-CH 800V 13A TO247 |
|
IRL540PBFVishay / Siliconix |
MOSFET N-CH 100V 28A TO220AB |
|
IXFN120N65X2Wickmann / Littelfuse |
MOSFET N-CH 650V 108A SOT227B |
|
SIHG70N60EF-GE3Vishay / Siliconix |
MOSFET N-CH 600V 70A TO247AC |
|
APT10M19SVFRGRoving Networks / Microchip Technology |
MOSFET N-CH 100V 75A D3PAK |
|
TPH4R003NL,L1QToshiba Electronic Devices and Storage Corporation |
MOSFET N-CH 30V 40A 8SOP |
|
NTD18N06LT4GSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 60V 18A DPAK |
|
VS-FC420SA10Vishay General Semiconductor – Diodes Division |
MOSFET N-CH 100V 435A SOT227 |
|
SUD80460E-GE3Vishay / Siliconix |
MOSFET N-CH 150V 42A TO252AA |
|
NVTFS4C06NTAGRochester Electronics |
MOSFET N-CH 30V 21A 8WDFN |
|
STF21N65M5STMicroelectronics |
MOSFET N-CH 650V 17A TO220FP |
|
STP45N10F7STMicroelectronics |
MOSFET N-CH 100V 45A TO220 |
|
RQ3G150GNTBROHM Semiconductor |
MOSFET N-CHANNEL 40V 39A 8HSMT |