类型 | 描述 |
---|---|
系列: | * |
包裹: | Bulk |
零件状态: | Active |
场效应管类型: | - |
技术: | - |
漏源电压 (vdss): | - |
电流 - 连续漏极 (id) @ 25°c: | - |
驱动电压(最大 rds on,最小 rds on): | - |
rds on (max) @ id, vgs: | - |
vgs(th) (最大值) @ id: | - |
栅极电荷 (qg) (max) @ vgs: | - |
vgs (最大值): | - |
输入电容 (ciss) (max) @ vds: | - |
场效应管特征: | - |
功耗(最大值): | - |
工作温度: | - |
安装类型: | - |
供应商设备包: | - |
包/箱: | - |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
NTD4813N-1GRochester Electronics |
MOSFET N-CH 30V 7.6A/40A IPAK |
|
MCU90N06A-TPMicro Commercial Components (MCC) |
N-CHANNEL MOSFET, DPAK |
|
IPB048N15N5LFATMA1IR (Infineon Technologies) |
MOSFET N-CH 150V 120A D2PAK |
|
PMN20EN,115Rochester Electronics |
SMALL SIGNAL FIELD-EFFECT TRANSI |
|
IXTA15N50L2-TRLWickmann / Littelfuse |
MOSFET N-CH 500V 15A TO263 |
|
STD11N60DM2STMicroelectronics |
MOSFET N-CH 650V 10A DPAK |
|
FDMC013P030ZSanyo Semiconductor/ON Semiconductor |
MOSFET P-CHANNEL 30V 54A 8MLP |
|
SQJA38EP-T1_GE3Vishay / Siliconix |
MOSFET N-CH 40V 60A PPAK SO-8 |
|
IXTA1N120P-TRLWickmann / Littelfuse |
MOSFET N-CH 1200V 1A TO263 |
|
SQ2361ES-T1_BE3Vishay / Siliconix |
MOSFET P-CH 60V 2.8A SOT23-3 |
|
RD3P08BBDTLROHM Semiconductor |
MOSFET N-CH 100V 80A TO252 |
|
STP43N60DM2STMicroelectronics |
MOSFET N-CH 600V 34A TO220 |
|
IMBG120R090M1HXTMA1IR (Infineon Technologies) |
TRANS SJT N-CH 1.2KV 26A TO263 |