English
简体中文
TVS DIODE 136V 219V SMB
MOSFET N-CH 200V 5.5A TO220-3
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | SIPMOS® |
| 包裹: | Tube |
| 零件状态: | Obsolete |
| 场效应管类型: | N-Channel |
| 技术: | MOSFET (Metal Oxide) |
| 漏源电压 (vdss): | 200 V |
| 电流 - 连续漏极 (id) @ 25°c: | 5.5A (Tc) |
| 驱动电压（最大 rds on，最小 rds on）: | 10V |
| rds on (max) @ id, vgs: | 600mOhm @ 4.5A, 10V |
| vgs(th) (最大值) @ id: | 4V @ 1mA |
| 栅极电荷 (qg) (max) @ vgs: | - |
| vgs (最大值): | ±20V |
| 输入电容 (ciss) (max) @ vds: | 530 pF @ 25 V |
| 场效应管特征: | - |
| 功耗（最大值）: | 40W (Tc) |
| 工作温度: | -55°C ~ 150°C (TJ) |
| 安装类型: | Through Hole |
| 供应商设备包: | PG-TO220-3 |
| 包/箱: | TO-220-3 |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
RS1G260MNTBROHM Semiconductor |
MOSFET N-CH 40V 26A 8HSOP |
|
IXTH12N65X2Wickmann / Littelfuse |
MOSFET N-CH 650V 12A TO247-3 |
|
BUK7Y7R2-60EXNexperia |
MOSFET N-CH 60V LFPAK56 PWR-SO8 |
|
IPD60R2K1CEAUMA1IR (Infineon Technologies) |
MOSFET N-CH 600V 2.3A TO252-3 |
|
PHK31NQ03LT,518Rochester Electronics |
MOSFET N-CH 30V 30.4A 8SO |
|
3LN01M-TL-ERochester Electronics |
N-CHANNEL, MOSFET |
|
IRFP350Rochester Electronics |
MOSFET N-CH 400V 16A TO247-3 |
|
SPD06N60C3BTMA1Rochester Electronics |
POWER FIELD-EFFECT TRANSISTOR, 6 |
|
STP7N52K3STMicroelectronics |
MOSFET N-CH 525V 6A TO220AB |
|
NVMFD6H852NLT1GSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 80V 7A/25A 8DFN DL |
|
BSS214NWH6327Rochester Electronics |
BSS214 - 250V-600V SMALL SIGNAL |
|
IRFB3306GPBFIR (Infineon Technologies) |
MOSFET N-CH 60V 120A TO220AB |
|
SIHFL110TR-BE3Vishay / Siliconix |
MOSFET N-CH 100V 1.5A SOT223 |