English
简体中文
MOSFET N-CH 1000V 3.5A ISOPLS247
IC SUPERVISOR 1 CHANNEL SNT-4A
IC REG LINEAR 2.9V 150MA 4WLCSP
IC DRAM 256MBIT PAR 54TSOP II
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | HiPerFET™ |
| 包裹: | Bulk |
| 零件状态: | Active |
| 场效应管类型: | N-Channel |
| 技术: | MOSFET (Metal Oxide) |
| 漏源电压 (vdss): | 1000 V |
| 电流 - 连续漏极 (id) @ 25°c: | 3.5A (Tc) |
| 驱动电压（最大 rds on，最小 rds on）: | 10V |
| rds on (max) @ id, vgs: | 3Ohm @ 2A, 10V |
| vgs(th) (最大值) @ id: | 5V @ 1.5mA |
| 栅极电荷 (qg) (max) @ vgs: | 39 nC @ 10 V |
| vgs (最大值): | ±20V |
| 输入电容 (ciss) (max) @ vds: | 1050 pF @ 25 V |
| 场效应管特征: | - |
| 功耗（最大值）: | 80W (Tc) |
| 工作温度: | -55°C ~ 150°C (TJ) |
| 安装类型: | Through Hole |
| 供应商设备包: | ISOPLUS247™ |
| 包/箱: | ISOPLUS247™ |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
NTMYS021N06CLTWGSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 60V 9.8A/27A 4LFPAK |
|
IXFA10N80P-TRLWickmann / Littelfuse |
MOSFET N-CH 800V 10A TO263 |
|
DN2535N3-GRoving Networks / Microchip Technology |
MOSFET N-CH 350V 120MA TO92 |
|
STD95N2LH5STMicroelectronics |
MOSFET N-CH 25V 80A DPAK |
|
NDT014Sanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 60V 2.7A SOT-223-4 |
|
APT10026L2LLGRoving Networks / Microchip Technology |
MOSFET N-CH 1000V 38A 264 MAX |
|
SSM3K16FU,LFToshiba Electronic Devices and Storage Corporation |
MOSFET N-CH 20V 100MA USM |
|
AOT290LAlpha and Omega Semiconductor, Inc. |
MOSFET N-CH 100V 18A/140A TO220 |
|
FDG329NRochester Electronics |
MOSFET N-CH 20V 1.5A SC88 |
|
RSD201N10TLROHM Semiconductor |
MOSFET N-CH 100V 20A CPT3 |
|
NTGS3455T1GSanyo Semiconductor/ON Semiconductor |
MOSFET P-CH 30V 2.5A 6TSOP |
|
C2M0045170PWolfspeed - a Cree company |
SICFET N-CH 1700V 72A TO247-4 |
|
94-3316IR (Infineon Technologies) |
MOSFET N-CH 55V 2A SOT223 |