English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | TrenchFET® |
| 包裹: | Tape & Reel (TR)Cut Tape (CT) |
| 零件状态: | Active |
| 场效应管类型: | P-Channel |
| 技术: | MOSFET (Metal Oxide) |
| 漏源电压 (vdss): | 30 V |
| 电流 - 连续漏极 (id) @ 25°c: | 7.4A (Ta) |
| 驱动电压（最大 rds on，最小 rds on）: | 4.5V, 10V |
| rds on (max) @ id, vgs: | 18mOhm @ 11.7A, 10V |
| vgs(th) (最大值) @ id: | 3V @ 250µA |
| 栅极电荷 (qg) (max) @ vgs: | 56 nC @ 10 V |
| vgs (最大值): | ±20V |
| 输入电容 (ciss) (max) @ vds: | - |
| 场效应管特征: | - |
| 功耗（最大值）: | 1.5W (Ta) |
| 工作温度: | -55°C ~ 150°C (TJ) |
| 安装类型: | Surface Mount |
| 供应商设备包: | PowerPAK® 1212-8 |
| 包/箱: | PowerPAK® 1212-8 |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
FQB20N06LTMRochester Electronics |
MOSFET N-CH 60V 21A D2PAK |
|
TPH1R306P1,L1QToshiba Electronic Devices and Storage Corporation |
MOSFET N-CH 60V 100A 8SOP |
|
2N7000-D74ZSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 60V 200MA TO92-3 |
|
TK560A60Y,S4XToshiba Electronic Devices and Storage Corporation |
MOSFET N-CH 600V 7A TO220SIS |
|
RSR020N06TLROHM Semiconductor |
MOSFET N-CH 60V 2A TSMT3 |
|
HUF75339G3_NLRochester Electronics |
N-CHANNEL POWER MOSFET |
|
DMN601WKQ-7Zetex Semiconductors (Diodes Inc.) |
MOSFET N-CH 60V 300MA SOT323 |
|
DMP3026SFDF-13Zetex Semiconductors (Diodes Inc.) |
MOSFET P-CH 30V 10.3A 6UDFN |
|
STD1NK60T4STMicroelectronics |
MOSFET N-CH 600V 1A DPAK |
|
DKI10751Sanken Electric Co., Ltd. |
MOSFET N-CH 100V 15A TO252 |
|
BUK98150-55A/CUFNexperia |
MOSFET N-CH 55V 5.5A SOT223 |
|
FDB2670Rochester Electronics |
MOSFET N-CH 200V 19A TO263AB |
|
SQJ422EP-T1_BE3Vishay / Siliconix |
MOSFET N-CH 40V 75A PPAK SO-8 |
