类型 | 描述 |
---|---|
系列: | QFET® |
包裹: | Tube |
零件状态: | Obsolete |
场效应管类型: | N-Channel |
技术: | MOSFET (Metal Oxide) |
漏源电压 (vdss): | 600 V |
电流 - 连续漏极 (id) @ 25°c: | 3.6A (Tc) |
驱动电压(最大 rds on,最小 rds on): | 10V |
rds on (max) @ id, vgs: | 1.5Ohm @ 1.8A, 10V |
vgs(th) (最大值) @ id: | 5V @ 250µA |
栅极电荷 (qg) (max) @ vgs: | 25 nC @ 10 V |
vgs (最大值): | ±30V |
输入电容 (ciss) (max) @ vds: | 1 pF @ 25 V |
场效应管特征: | - |
功耗(最大值): | 44W (Tc) |
工作温度: | -55°C ~ 150°C (TJ) |
安装类型: | Through Hole |
供应商设备包: | TO-220F |
包/箱: | TO-220-3 Full Pack |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
![]() |
UJ4C075060K4SUnitedSiC |
SICFET N-CH 750V 28A TO247-4 |
![]() |
BSC010N04LSIATMA1IR (Infineon Technologies) |
MOSFET N-CH 40V 37A/100A TDSON |
![]() |
FCMT125N65S3Sanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 650V 24A 4PQFN |
![]() |
FDMC008N08CSanyo Semiconductor/ON Semiconductor |
MOSFET N-CHANNEL 80V 60A 8PQFN |
![]() |
IPP085N06LGAKSA1Rochester Electronics |
MOSFET N-CH 60V 80A TO220-3 |
![]() |
IRFZ40PBF-BE3Vishay / Siliconix |
MOSFET N-CH 60V 50A TO220AB |
![]() |
AUIRFR3806TRLIR (Infineon Technologies) |
MOSFET N-CH 60V 43A DPAK |
![]() |
BUZ103SL-E3045ARochester Electronics |
N-CHANNEL POWER MOSFET |
![]() |
SPP02N60S5Rochester Electronics |
N-CHANNEL POWER MOSFET |
![]() |
FDP150N10A-F102Sanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 100V 50A TO220-3 |
![]() |
STP22N60M6STMicroelectronics |
MOSFET N-CH 600V 15A TO220 |
![]() |
IPB60R600CPRochester Electronics |
N-CHANNEL POWER MOSFET |
![]() |
SI6469DQ-T1-GE3Vishay / Siliconix |
MOSFET P-CH 8V 8TSSOP |