English
简体中文
MOSFET N-CH 100V 80A POWERFLAT
IDC CABLE - CKR20S/AE20G/CCE20S
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | DeepGATE™, STripFET™ VII |
| 包裹: | Tape & Reel (TR)Cut Tape (CT) |
| 零件状态: | Active |
| 场效应管类型: | N-Channel |
| 技术: | MOSFET (Metal Oxide) |
| 漏源电压 (vdss): | 100 V |
| 电流 - 连续漏极 (id) @ 25°c: | 80A (Tc) |
| 驱动电压（最大 rds on，最小 rds on）: | 10V |
| rds on (max) @ id, vgs: | 7.3mOhm @ 19A, 10V |
| vgs(th) (最大值) @ id: | 4V @ 250µA |
| 栅极电荷 (qg) (max) @ vgs: | 80 nC @ 10 V |
| vgs (最大值): | ±20V |
| 输入电容 (ciss) (max) @ vds: | 5680 pF @ 50 V |
| 场效应管特征: | - |
| 功耗（最大值）: | 5W (Ta), 100W (Tc) |
| 工作温度: | -55°C ~ 175°C (TJ) |
| 安装类型: | Surface Mount |
| 供应商设备包: | PowerFlat™ (5x6) |
| 包/箱: | 8-PowerVDFN |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
NTMFS4933NT3GSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 30V 20A/210A 5DFN |
|
IPP80P03P405AKSA1Rochester Electronics |
MOSFET P-CH 30V 80A TO220-3 |
|
RD3T075CNTL1ROHM Semiconductor |
MOSFET N-CH 200V 7.5A TO252 |
|
FDS7082N3Rochester Electronics |
MOSFET N-CH 30V 17.5A 8SO |
|
AUIRLL024ZTRIR (Infineon Technologies) |
MOSFET N-CH 55V 5A SOT223 |
|
IRF3315SPBFRochester Electronics |
HEXFET POWER MOSFET |
|
PH3330L,115Rochester Electronics |
MOSFET N-CH 30V 100A LFPAK56 |
|
SI3430DV-T1-GE3Vishay / Siliconix |
MOSFET N-CH 100V 1.8A 6TSOP |
|
IPD25CN10NGATMA1IR (Infineon Technologies) |
MOSFET N-CH 100V 35A TO252-3 |
|
STFH10N60M2STMicroelectronics |
MOSFET N-CH 600V 7.5A TO220FP |
|
DMP3015LSS-13Zetex Semiconductors (Diodes Inc.) |
MOSFET P-CH 30V 13A 8SOP |
|
NVTFS6H854NTAGSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 80V 9.5A/44A 8WDFN |
|
FQI27N25TU-F085Rochester Electronics |
25.5A, 250V, 0.11OHM, N-CHANNEL |