English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | MDmesh™ M2-EP |
| 包裹: | Tape & Reel (TR) |
| 零件状态: | Active |
| 场效应管类型: | N-Channel |
| 技术: | MOSFET (Metal Oxide) |
| 漏源电压 (vdss): | 600 V |
| 电流 - 连续漏极 (id) @ 25°c: | 26A (Tc) |
| 驱动电压（最大 rds on，最小 rds on）: | - |
| rds on (max) @ id, vgs: | - |
| vgs(th) (最大值) @ id: | - |
| 栅极电荷 (qg) (max) @ vgs: | - |
| vgs (最大值): | - |
| 输入电容 (ciss) (max) @ vds: | - |
| 场效应管特征: | - |
| 功耗（最大值）: | - |
| 工作温度: | 150°C (TJ) |
| 安装类型: | Through Hole |
| 供应商设备包: | TO-220 |
| 包/箱: | TO-220-3 |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
STF13N60M2STMicroelectronics |
MOSFET N-CH 600V 11A TO220FP |
|
CPH3351-TL-WSanyo Semiconductor/ON Semiconductor |
MOSFET P-CH 60V 1.8A 3CPH |
|
HUFA75344S3STRochester Electronics |
MOSFET N-CH 55V 75A D2PAK |
|
IPP12CN10LGXKSA1IR (Infineon Technologies) |
MOSFET N-CH 100V 69A TO220-3 |
|
FDS6672ARochester Electronics |
MOSFET N-CH 30V 12.5A 8SOIC |
|
BSC046N02KSGAUMA1IR (Infineon Technologies) |
MOSFET N-CH 20V 19A/80A TDSON |
|
IPL60R255P6AUMA1Rochester Electronics |
MOSFET N-CH 600V 15.9A 4VSON |
|
BSC060P03NS3EGATMA1Rochester Electronics |
BSC060P03 - 20V-250V P-CHANNEL P |
|
NTE2386NTE Electronics, Inc. |
MOSFET N-CHANNEL 600V 6.2A TO3 |
|
PMV117EN,215Rochester Electronics |
MOSFET N-CH 30V 2.5A TO236AB |
|
IPB80P04P405ATMA1IR (Infineon Technologies) |
MOSFET P-CH 40V 80A TO263-3 |
|
2SK3048Panasonic |
MOSFET N-CH 600V 3A TO220D-A1 |
|
IPP65R380E6XKSA1Rochester Electronics |
MOSFET N-CH 650V 10.6A TO220-3 |
