类型 | 描述 |
---|---|
系列: | PolarP™ |
包裹: | Tube |
零件状态: | Active |
场效应管类型: | P-Channel |
技术: | MOSFET (Metal Oxide) |
漏源电压 (vdss): | 500 V |
电流 - 连续漏极 (id) @ 25°c: | 10A (Tc) |
驱动电压(最大 rds on,最小 rds on): | 10V |
rds on (max) @ id, vgs: | 1Ohm @ 5A, 10V |
vgs(th) (最大值) @ id: | 4V @ 250µA |
栅极电荷 (qg) (max) @ vgs: | 50 nC @ 10 V |
vgs (最大值): | ±20V |
输入电容 (ciss) (max) @ vds: | 2840 pF @ 25 V |
场效应管特征: | - |
功耗(最大值): | 300W (Tc) |
工作温度: | -55°C ~ 150°C (TJ) |
安装类型: | Surface Mount |
供应商设备包: | TO-263 (IXTA) |
包/箱: | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
BSC030N03LSGRochester Electronics |
BSC030N03 - 12V-300V N-CHANNEL P |
|
IXFK48N60Q3Wickmann / Littelfuse |
MOSFET N-CH 600V 48A TO264AA |
|
BUK9M4R3-40HXNexperia |
MOSFET N-CH 40V 95A LFPAK33 |
|
PSMN5R8-40YS,115Nexperia |
MOSFET N-CH 40V 90A LFPAK56 |
|
SI6426DQRochester Electronics |
SMALL SIGNAL N-CHANNEL MOSFET |
|
SSM3K15AMFV,L3FToshiba Electronic Devices and Storage Corporation |
MOSFET N-CH 30V 100MA VESM |
|
SUM70101EL-GE3Vishay / Siliconix |
MOSFET P-CH 100V 120A TO263 |
|
BSC0504NSIATMA1IR (Infineon Technologies) |
MOSFET N-CH 30V 21A/72A TDSON |
|
BUK7Y2R5-40HXNexperia |
MOSFET N-CH 40V 120A LFPAK56 |
|
DMTH6002LPS-13Zetex Semiconductors (Diodes Inc.) |
MOSFET N-CH 60V 100A PWRDI5060-8 |
|
SI7804DN-T1-GE3Vishay / Siliconix |
MOSFET N-CH 30V 6.5A PPAK1212-8 |
|
VN2460N8-GRoving Networks / Microchip Technology |
MOSFET N-CH 600V 200MA TO243AA |
|
IPLK80R750P7ATMA1IR (Infineon Technologies) |
MOSFET 800V TDSON-8 |