类型 | 描述 |
---|---|
系列: | DTMOSIV |
包裹: | Tape & Reel (TR)Cut Tape (CT) |
零件状态: | Active |
场效应管类型: | N-Channel |
技术: | MOSFET (Metal Oxide) |
漏源电压 (vdss): | 600 V |
电流 - 连续漏极 (id) @ 25°c: | 9.7A (Ta) |
驱动电压(最大 rds on,最小 rds on): | 10V |
rds on (max) @ id, vgs: | 430mOhm @ 4.9A, 10V |
vgs(th) (最大值) @ id: | 3.7V @ 500µA |
栅极电荷 (qg) (max) @ vgs: | 20 nC @ 10 V |
vgs (最大值): | ±30V |
输入电容 (ciss) (max) @ vds: | 700 pF @ 300 V |
场效应管特征: | Super Junction |
功耗(最大值): | 80W (Tc) |
工作温度: | 150°C (TJ) |
安装类型: | Surface Mount |
供应商设备包: | DPAK |
包/箱: | TO-252-3, DPak (2 Leads + Tab), SC-63 |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
IRF730ASTRLPBFVishay / Siliconix |
MOSFET N-CH 400V 5.5A D2PAK |
|
CDM2208-800FP SL PBFREECentral Semiconductor |
MOSFET N-CH 800V 8A TO220FP |
|
IPB70N04S406Rochester Electronics |
N-CHANNEL POWER MOSFET |
|
FDPF8N50NZFRochester Electronics |
MOSFET N-CH 500V 7A TO220F |
|
BSC034N10LS5ATMA1IR (Infineon Technologies) |
MOSFET N-CH 100V 19A/100A TDSON |
|
RF6E065BNTCRROHM Semiconductor |
MOSFET N-CH 30V 6.5A TUMT6 |
|
HUFA75333G3Rochester Electronics |
N-CHANNEL POWER MOSFET |
|
BSZ0502NSIATMA1Rochester Electronics |
MOSFET N-CH 30V 22A/40A TSDSON |
|
ATP201-TL-HRochester Electronics |
MOSFET N-CH 30V 35A ATPAK |
|
IXFB170N30PWickmann / Littelfuse |
MOSFET N-CH 300V 170A PLUS264 |
|
IXTA10P15TWickmann / Littelfuse |
MOSFET P-CH 150V 10A TO263 |
|
IPT60R150G7XTMA1IR (Infineon Technologies) |
MOSFET N-CH 650V 17A 8HSOF |
|
FCPF600N60ZL1Sanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 650V 7.4A TO220F |