类型 | 描述 |
---|---|
系列: | - |
包裹: | Tape & Reel (TR)Cut Tape (CT) |
零件状态: | Active |
场效应管类型: | N-Channel |
技术: | MOSFET (Metal Oxide) |
漏源电压 (vdss): | 60 V |
电流 - 连续漏极 (id) @ 25°c: | 200mA (Ta) |
驱动电压(最大 rds on,最小 rds on): | 4.5V, 10V |
rds on (max) @ id, vgs: | 5Ohm @ 500mA, 10V |
vgs(th) (最大值) @ id: | 3V @ 1mA |
栅极电荷 (qg) (max) @ vgs: | - |
vgs (最大值): | ±20V |
输入电容 (ciss) (max) @ vds: | 50 pF @ 25 V |
场效应管特征: | - |
功耗(最大值): | 400mW (Ta) |
工作温度: | -55°C ~ 150°C (TJ) |
安装类型: | Through Hole |
供应商设备包: | TO-92-3 |
包/箱: | TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
BSD316SNH6327XTSA1IR (Infineon Technologies) |
MOSFET N-CH 30V 1.4A SOT363-6 |
|
DMT6009LK3-13Zetex Semiconductors (Diodes Inc.) |
MOSFET N-CH 60V 13.3A/57A TO252 |
|
NTMFS4707NT1GRochester Electronics |
MOSFET N-CH 30V 6.9A 5DFN |
|
SI2301-TPMicro Commercial Components (MCC) |
MOSFET P-CH 20V 2.8A SOT-23 |
|
BF1005SE6327Rochester Electronics |
RF N-CHANNEL MOSFET |
|
TN5325N3-GRoving Networks / Microchip Technology |
MOSFET N-CH 250V 215MA TO92-3 |
|
IPI60R199CPXKSA1IR (Infineon Technologies) |
MOSFET N-CH 600V 16A TO262-3 |
|
IRF7402TRPBFRochester Electronics |
MOSFET N-CH 20V 6.8A 8SO |
|
SPD30N08S2-22Rochester Electronics |
MOSFET N-CH 75V 30A TO252-3 |
|
UJ4C075060K3SUnitedSiC |
SICFET N-CH 750V 28A TO247-3 |
|
SIE812DF-T1-GE3Vishay / Siliconix |
MOSFET N-CH 40V 60A 10POLARPAK |
|
DMN3008SFG-7Zetex Semiconductors (Diodes Inc.) |
MOSFET N-CH 30V 17.6A PWRDI3333 |
|
SIHG460B-GE3Vishay / Siliconix |
MOSFET N-CH 500V 20A TO247AC |