English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | TrenchFET® Gen III |
| 包裹: | Tape & Reel (TR)Cut Tape (CT) |
| 零件状态: | Active |
| 场效应管类型: | P-Channel |
| 技术: | MOSFET (Metal Oxide) |
| 漏源电压 (vdss): | 20 V |
| 电流 - 连续漏极 (id) @ 25°c: | 2.7A (Tc) |
| 驱动电压（最大 rds on，最小 rds on）: | 1.5V, 4.5V |
| rds on (max) @ id, vgs: | 95mOhm @ 1A, 4.5V |
| vgs(th) (最大值) @ id: | 800mV @ 250µA |
| 栅极电荷 (qg) (max) @ vgs: | 10 nC @ 4.5 V |
| vgs (最大值): | ±8V |
| 输入电容 (ciss) (max) @ vds: | 580 pF @ 10 V |
| 场效应管特征: | - |
| 功耗（最大值）: | 900mW (Tc) |
| 工作温度: | -55°C ~ 150°C (TJ) |
| 安装类型: | Surface Mount |
| 供应商设备包: | 4-MICRO FOOT® (0.8x0.8) |
| 包/箱: | 4-XFBGA |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
TSM4NB60CI C0GTSC (Taiwan Semiconductor) |
MOSFET N-CH 600V 4A ITO220AB |
|
VN2110K1-GRoving Networks / Microchip Technology |
MOSFET N-CH 100V 200MA SOT23-3 |
|
APT50M65LLLGRoving Networks / Microchip Technology |
MOSFET N-CH 500V 67A TO264 |
|
STL15N60M2-EPSTMicroelectronics |
MOSFET N-CH 600V 7A POWERFLAT HV |
|
SUM90330E-GE3Vishay / Siliconix |
MOSFET N-CH 200V 35.1A TO263 |
|
IPI020N06NAKSA1Rochester Electronics |
OPTLMOS N-CHANNEL POWER MOSFET |
|
FDMC8360LET40Sanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 40V 27A/141A POWER33 |
|
FQD16N25CTMSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 250V 16A DPAK |
|
VN2222LL-G-P013Roving Networks / Microchip Technology |
MOSFET N-CH 60V 230MA TO92-3 |
|
RSH110N03TB1ROHM Semiconductor |
MOSFET N-CH 30V 11A 8SOP |
|
APT20M45SVFRGRoving Networks / Microchip Technology |
MOSFET N-CH 200V 56A D3PAK |
|
DMT3008LFDF-7Zetex Semiconductors (Diodes Inc.) |
MOSFET N-CH 30V 12A 6UDFN |
|
2N7002BKW,115Nexperia |
MOSFET N-CH 60V 310MA SOT323 |
