类型 | 描述 |
---|---|
系列: | - |
包裹: | Tube |
零件状态: | Obsolete |
场效应管类型: | N-Channel |
技术: | MOSFET (Metal Oxide) |
漏源电压 (vdss): | 16 V |
电流 - 连续漏极 (id) @ 25°c: | 9.6A (Ta), 51A (Tc) |
驱动电压(最大 rds on,最小 rds on): | 4.5V, 10V |
rds on (max) @ id, vgs: | 8.75mOhm @ 15A, 10V |
vgs(th) (最大值) @ id: | 2.5V @ 250µA |
栅极电荷 (qg) (max) @ vgs: | 12.8 nC @ 4.5 V |
vgs (最大值): | ±16V |
输入电容 (ciss) (max) @ vds: | 963 pF @ 12 V |
场效应管特征: | - |
功耗(最大值): | 1.2W (Ta), 34.9W (Tc) |
工作温度: | -55°C ~ 175°C (TJ) |
安装类型: | Through Hole |
供应商设备包: | I-PAK |
包/箱: | TO-251-3 Stub Leads, IPak |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
FDT86244Sanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 150V 2.8A SOT223-4 |
|
BUK9516-55A,127Rochester Electronics |
PFET, 66A I(D), 55V, 0.017OHM, 1 |
|
BSC016N03LSGRochester Electronics |
BSC016N03 - 12V-300V N-CHANNEL P |
|
NTLUS4C12NTAGSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 30V 6.8A 6UDFN |
|
SIHU5N50D-GE3Vishay / Siliconix |
MOSFET N-CH 500V 5.3A TO251 |
|
VN0106N3-GRoving Networks / Microchip Technology |
MOSFET N-CH 60V 350MA TO92-3 |
|
FDMC86248Sanyo Semiconductor/ON Semiconductor |
MOSFET N CH 150V 3.4A POWER33 |
|
SPP16N50C3Rochester Electronics |
N-CHANNEL POWER MOSFET |
|
PHB47NQ10T,118Nexperia |
MOSFET N-CH 100V 47A D2PAK |
|
STO67N60M6STMicroelectronics |
MOSFET N-CH 600V 34A TOLL |
|
CPH3455-TL-WRochester Electronics |
MOSFET N-CH 35V 3A 3CPH |
|
CSD19537Q3Texas Instruments |
MOSFET N-CH 100V 9.7A/50A 8VSON |
|
BUK6213-30C,118Rochester Electronics |
PFET, 47A I(D), 30V, 0.029OHM, 1 |