English
简体中文
MOSFET N CH 40V 120A D2PAK
HEATSHRINK 1.181" X 4' BLACK
OPTOISO 4.17KV TRANS W/BASE 6SMD
BB 6 R SLA BK BULK
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | HEXFET®, StrongIRFET™ |
| 包裹: | Tape & Reel (TR)Cut Tape (CT) |
| 零件状态: | Active |
| 场效应管类型: | N-Channel |
| 技术: | MOSFET (Metal Oxide) |
| 漏源电压 (vdss): | 40 V |
| 电流 - 连续漏极 (id) @ 25°c: | 120A (Tc) |
| 驱动电压（最大 rds on，最小 rds on）: | 6V, 10V |
| rds on (max) @ id, vgs: | 2.5mOhm @ 100A, 10V |
| vgs(th) (最大值) @ id: | 3.9V @ 100µA |
| 栅极电荷 (qg) (max) @ vgs: | 135 nC @ 10 V |
| vgs (最大值): | ±20V |
| 输入电容 (ciss) (max) @ vds: | 4730 pF @ 25 V |
| 场效应管特征: | - |
| 功耗（最大值）: | 208W (Tc) |
| 工作温度: | -55°C ~ 175°C (TJ) |
| 安装类型: | Surface Mount |
| 供应商设备包: | TO-263 (D²Pak) |
| 包/箱: | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
FDD13AN06A0-F085Rochester Electronics |
POWER FIELD-EFFECT TRANSISTOR, 9 |
|
NP20P06SLG-E1-AYRenesas Electronics America |
MOSFET P-CH 60V 20A TO252 |
|
IRF8252PBFRochester Electronics |
MOSFET N-CH 25V 25A 8SO |
|
PSMN3R8-100BS,118Nexperia |
MOSFET N-CH 100V 120A D2PAK |
|
IRFPC40Rochester Electronics |
6.8A 600V 1.200 OHM N-CHANNEL |
|
IPB60R055CFD7ATMA1IR (Infineon Technologies) |
MOSFET N-CH 650V 38A TO263-3-2 |
|
HUFA76439P3Rochester Electronics |
MOSFET N-CH 60V 75A TO220-3 |
|
STB120N4LF6STMicroelectronics |
MOSFET N-CH 40V 80A D2PAK |
|
BSS192PH6327FTSA1IR (Infineon Technologies) |
MOSFET P-CH 250V 190MA SOT89 |
|
STWA40N95K5STMicroelectronics |
MOSFET N-CH 950V 38A TO247-3 |
|
IRLR9343PBFRochester Electronics |
DIGITAL AUDIO MOSFET |
|
NTGS3433T1Rochester Electronics |
MOSFET P-CH 12V 2.35A 6TSOP |
|
HUF76629D3ST_NLRochester Electronics |
N-CHANNEL POWER MOSFET |