English
简体中文
MOSFET N-CH 650V 85A TO220-3
CMC 20A 2LN 170 OHM TH
FIXED IND 12UH 2.2A 90 MOHM SMD
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Tube |
| 零件状态: | Active |
| 场效应管类型: | N-Channel |
| 技术: | - |
| 漏源电压 (vdss): | 650 V |
| 电流 - 连续漏极 (id) @ 25°c: | 85A (Tc) |
| 驱动电压（最大 rds on，最小 rds on）: | 12V |
| rds on (max) @ id, vgs: | 35mOhm @ 50A, 12V |
| vgs(th) (最大值) @ id: | 6V @ 10mA |
| 栅极电荷 (qg) (max) @ vgs: | 51 nC @ 15 V |
| vgs (最大值): | ±25V |
| 输入电容 (ciss) (max) @ vds: | 1500 pF @ 100 V |
| 场效应管特征: | - |
| 功耗（最大值）: | 441W (Tc) |
| 工作温度: | -55°C ~ 175°C (TJ) |
| 安装类型: | Through Hole |
| 供应商设备包: | TO-220-3 |
| 包/箱: | TO-220-3 |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
RM3N700S4Rectron USA |
MOSFET N-CHANNEL 700V 3A SOT223 |
|
SI7135DP-T1-GE3Vishay / Siliconix |
MOSFET P-CH 30V 60A PPAK SO-8 |
|
HUF75333P3Rochester Electronics |
MOSFET N-CH 55V 66A TO220-3 |
|
FDS2582Sanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 150V 4.1A 8SOIC |
|
DMTH43M8LPSQ-13Zetex Semiconductors (Diodes Inc.) |
MOSFET N-CH 40V 22A PWRDI5060 |
|
STD44N4LF6STMicroelectronics |
MOSFET N-CH 40V 44A DPAK |
|
RF1S25N06Rochester Electronics |
25A, 60V, 0.047 OHM, N-CHANNEL P |
|
SPP15P10PRochester Electronics |
MOSFET P-CH 100V 15A TO220-3 |
|
IPN95R3K7P7ATMA1IR (Infineon Technologies) |
MOSFET N-CH 950V 2A SOT223 |
|
IXFP36N20X3Wickmann / Littelfuse |
MOSFET N-CH 200V 36A TO220 |
|
FQB30N06LTMSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 60V 32A D2PAK |
|
IXFQ140N20X3Wickmann / Littelfuse |
MOSFET N-CH 200V 140A TO3P |
|
SQJA82EP-T1_GE3Vishay / Siliconix |
MOSFET N-CH 80V 60A PPAK SO-8 |