English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | HEXFET® |
| 包裹: | Tape & Reel (TR) |
| 零件状态: | Not For New Designs |
| 场效应管类型: | N-Channel |
| 技术: | MOSFET (Metal Oxide) |
| 漏源电压 (vdss): | 30 V |
| 电流 - 连续漏极 (id) @ 25°c: | 65A (Tc) |
| 驱动电压（最大 rds on，最小 rds on）: | 4.5V, 10V |
| rds on (max) @ id, vgs: | 10mOhm @ 15A, 10V |
| vgs(th) (最大值) @ id: | 1V @ 250µA |
| 栅极电荷 (qg) (max) @ vgs: | 14 nC @ 4.5 V |
| vgs (最大值): | ±20V |
| 输入电容 (ciss) (max) @ vds: | 1030 pF @ 15 V |
| 场效应管特征: | - |
| 功耗（最大值）: | 75W (Tc) |
| 工作温度: | -55°C ~ 175°C (TJ) |
| 安装类型: | Surface Mount |
| 供应商设备包: | D-Pak |
| 包/箱: | TO-252-3, DPak (2 Leads + Tab), SC-63 |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
MSC060SMA070SRoving Networks / Microchip Technology |
SICFET N-CH 700V 37A D3PAK |
|
IPD60R450E6ATMA1Rochester Electronics |
MOSFET N-CH 600V 9.2A TO252-3 |
|
STP11NM60STMicroelectronics |
MOSFET N-CH 650V 11A TO220AB |
|
AO3402Alpha and Omega Semiconductor, Inc. |
MOSFET N-CH 30V 4A SOT23-3L |
|
RSF010P03TLROHM Semiconductor |
MOSFET P-CH 30V 1A TUMT3 |
|
IPW65R280E6Rochester Electronics |
650 V COOLMOS E6 POWER MOSFET |
|
CSD19533Q5ATTexas Instruments |
MOSFET N-CH 100V 100A 8VSON |
|
SCT3030KLGC11ROHM Semiconductor |
SICFET N-CH 1200V 72A TO247N |
|
SI4456DY-T1-E3Vishay / Siliconix |
MOSFET N-CH 40V 33A 8SO |
|
2N7002LT3GSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 60V 115MA SOT23-3 |
|
STH275N8F7-6AGSTMicroelectronics |
MOSFET N-CH 80V 180A H2PAK-6 |
|
DI015N25D1Diotec Semiconductor |
MOSFET N-CH 250V 15A TO252-3 |
|
FQP12N60Rochester Electronics |
MOSFET N-CH 600V 10.5A TO220-3 |
