类型 | 描述 |
---|---|
系列: | HEXFET® |
包裹: | Tape & Reel (TR)Cut Tape (CT) |
零件状态: | Active |
场效应管类型: | N-Channel |
技术: | MOSFET (Metal Oxide) |
漏源电压 (vdss): | 40 V |
电流 - 连续漏极 (id) @ 25°c: | 240A (Tc) |
驱动电压(最大 rds on,最小 rds on): | 10V |
rds on (max) @ id, vgs: | 1.25mOhm @ 195A, 10V |
vgs(th) (最大值) @ id: | 4V @ 250µA |
栅极电荷 (qg) (max) @ vgs: | 240 nC @ 10 V |
vgs (最大值): | ±20V |
输入电容 (ciss) (max) @ vds: | 9130 pF @ 25 V |
场效应管特征: | - |
功耗(最大值): | 380W (Tc) |
工作温度: | -55°C ~ 175°C (TJ) |
安装类型: | Surface Mount |
供应商设备包: | D2PAK (7-Lead) |
包/箱: | TO-263-7, D²Pak (6 Leads + Tab), TO-263CB |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
SQJ431EP-T1_GE3Vishay / Siliconix |
MOSFET P-CH 200V 12A PPAK SO-8 |
|
NTHL080N120SC1Sanyo Semiconductor/ON Semiconductor |
SICFET N-CH 1200V 44A TO247-3 |
|
TK40A06N1,S4XToshiba Electronic Devices and Storage Corporation |
MOSFET N-CH 60V 40A TO220SIS |
|
TK100A10N1,S4XToshiba Electronic Devices and Storage Corporation |
MOSFET N-CH 100V 100A TO220SIS |
|
STB24N60M6STMicroelectronics |
MOSFET N-CH 600V D2PAK |
|
FQP2NA90Rochester Electronics |
MOSFET N-CH 900V 2.8A TO220-3 |
|
CPH6604-TL-ERochester Electronics |
N-CHANNEL SILICON MOSFET |
|
FQAF11N90CSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 900V 7A TO3PF |
|
IRF232Rochester Electronics |
N-CHANNEL POWER MOSFET |
|
AON2405Alpha and Omega Semiconductor, Inc. |
MOSFET P-CH 20V 8A 6DFN |
|
IRFDC20PBFVishay / Siliconix |
MOSFET N-CH 600V 320MA 4DIP |
|
RJK0366DPA-02#J0BRochester Electronics |
MOSFET N-CH 30V 25A 8WPAK |
|
RQ5A030APTLROHM Semiconductor |
MOSFET P-CH 12V 3A TSMT3 |