English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Tape & Reel (TR)Cut Tape (CT) |
| 零件状态: | Active |
| 场效应管类型: | P-Channel |
| 技术: | MOSFET (Metal Oxide) |
| 漏源电压 (vdss): | 60 V |
| 电流 - 连续漏极 (id) @ 25°c: | 20A (Tc) |
| 驱动电压（最大 rds on，最小 rds on）: | 4.5V, 10V |
| rds on (max) @ id, vgs: | 48mOhm @ 8A, 10V |
| vgs(th) (最大值) @ id: | 2.2V @ 250µA |
| 栅极电荷 (qg) (max) @ vgs: | 22.4 nC @ 10 V |
| vgs (最大值): | ±20V |
| 输入电容 (ciss) (max) @ vds: | 1250 pF @ 30 V |
| 场效应管特征: | - |
| 功耗（最大值）: | 66W (Tc) |
| 工作温度: | -50°C ~ 150°C (TJ) |
| 安装类型: | Surface Mount |
| 供应商设备包: | TO-252, (D-Pak) |
| 包/箱: | TO-252-3, DPak (2 Leads + Tab), SC-63 |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
DMN10H170SFGQ-13Zetex Semiconductors (Diodes Inc.) |
MOSFET N-CH 100V PWRDI3333 |
|
RTQ020N03TRROHM Semiconductor |
MOSFET N-CH 30V 2A TSMT6 |
|
SIHD6N65ET5-GE3Vishay / Siliconix |
MOSFET N-CH 650V 7A TO252AA |
|
IPA65R190C7XKSA1IR (Infineon Technologies) |
MOSFET N-CH 650V 8A TO220-FP |
|
IXFK180N15PWickmann / Littelfuse |
MOSFET N-CH 150V 180A TO264AA |
|
STD5N60DM2STMicroelectronics |
MOSFET N-CH 600V 3.5A DPAK |
|
ISZ0501NLSATMA1IR (Infineon Technologies) |
25V, N-CH MOSFET, LOGIC LEVEL, P |
|
SPI08N50C3XKSA1Rochester Electronics |
MOSFET N-CH 560V 7.6A TO262-3 |
|
NTA4153NT3GSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 20V 915MA SC75 |
|
PHD97NQ03LT,118Rochester Electronics |
MOSFET N-CH 25V 75A DPAK |
|
BUK7Y3R5-40HXNexperia |
MOSFET N-CH 40V 120A LFPAK56 |
|
TPN2R703NL,L1QToshiba Electronic Devices and Storage Corporation |
MOSFET N-CH 30V 45A 8TSON |
|
IXFR80N50Q3Wickmann / Littelfuse |
MOSFET N-CH 500V 50A ISOPLUS247 |
