English
简体中文
MOSFET N-CH 950V 6A H2PAK-2
IGBT MOD 1200V 200A 695W
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | MDmesh™ K5 |
| 包裹: | Tape & Reel (TR)Cut Tape (CT) |
| 零件状态: | Active |
| 场效应管类型: | N-Channel |
| 技术: | MOSFET (Metal Oxide) |
| 漏源电压 (vdss): | 950 V |
| 电流 - 连续漏极 (id) @ 25°c: | 6A (Tc) |
| 驱动电压（最大 rds on，最小 rds on）: | 10V |
| rds on (max) @ id, vgs: | 1.25Ohm @ 3A, 10V |
| vgs(th) (最大值) @ id: | 5V @ 100µA |
| 栅极电荷 (qg) (max) @ vgs: | 13 nC @ 10 V |
| vgs (最大值): | ±30V |
| 输入电容 (ciss) (max) @ vds: | 450 pF @ 100 V |
| 场效应管特征: | - |
| 功耗（最大值）: | 110W (Tc) |
| 工作温度: | -55°C ~ 150°C (TJ) |
| 安装类型: | Surface Mount |
| 供应商设备包: | H2Pak-2 |
| 包/箱: | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
RD3P050SNFRATLROHM Semiconductor |
MOSFET N-CH 100V 5A TO252 |
|
IRF530Rochester Electronics |
MOSFET N-CH 100V 14A TO220AB |
|
2SK3116B-S19-AYRochester Electronics |
N-CHANNEL POWER MOSFET |
|
BUK78150-55A/CU135Rochester Electronics |
N-CHANNEL POWER MOSFET |
|
BUK7230-55A,118Rochester Electronics |
PFET, 38A I(D), 55V, 0.03OHM, 1- |
|
FDS4410ARochester Electronics |
SINGLE N CHANNEL, LOGIC-LEVEL, P |
|
AUIRF2804S-7PRochester Electronics |
PFET, 240A I(D), 40V, 0.0016OHM, |
|
CSD17308Q3TTexas Instruments |
MOSFET N-CH 30V 14A/44A 8VSON |
|
AON7516Alpha and Omega Semiconductor, Inc. |
MOSFET N-CH 30V 20A/30A 8DFN |
|
VN2410L-G-P014Roving Networks / Microchip Technology |
MOSFET N-CH 240V 190MA TO92-3 |
|
PSMN7R0-30MLC,115Nexperia |
MOSFET N-CH 30V 67A LFPAK33 |
|
SI4156DY-T1-GE3Vishay / Siliconix |
MOSFET N-CH 30V 24A 8SO |
|
NP80N055MDG-S18-AYRochester Electronics |
MOSFET N-CH 55V 80A TO220 |