类型 | 描述 |
---|---|
系列: | OptiMOS™ |
包裹: | Tape & Reel (TR) |
零件状态: | Active |
场效应管类型: | N-Channel |
技术: | MOSFET (Metal Oxide) |
漏源电压 (vdss): | 60 V |
电流 - 连续漏极 (id) @ 25°c: | 240A (Tc) |
驱动电压(最大 rds on,最小 rds on): | 6V, 10V |
rds on (max) @ id, vgs: | 1.2mOhm @ 100A, 10V |
vgs(th) (最大值) @ id: | 3.3V @ 143µA |
栅极电荷 (qg) (max) @ vgs: | 124 nC @ 10 V |
vgs (最大值): | ±20V |
输入电容 (ciss) (max) @ vds: | 9750 pF @ 30 V |
场效应管特征: | - |
功耗(最大值): | 214W (Tc) |
工作温度: | -55°C ~ 175°C (TJ) |
安装类型: | Surface Mount |
供应商设备包: | PG-HSOF-8-1 |
包/箱: | 8-PowerSFN |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
![]() |
FQD30N06TMSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 60V 22.7A TO252 |
![]() |
IPB022N04LGRochester Electronics |
N-CHANNEL POWER MOSFET |
![]() |
FDB14AN06LA0Rochester Electronics |
MOSFET N-CH 60V 10A/67A TO263AB |
![]() |
IPB100P03P3L-04Rochester Electronics |
P-CHANNEL POWER MOSFET |
![]() |
AUIRFB8409IR (Infineon Technologies) |
MOSFET N-CH 40V 195A TO220AB |
![]() |
IMW65R107M1HXKSA1IR (Infineon Technologies) |
MOSFET 650V NCH SIC TRENCH |
![]() |
TK20A60U(Q,M)Toshiba Electronic Devices and Storage Corporation |
MOSFET N-CH 600V 20A TO220SIS |
![]() |
2SK4094Rochester Electronics |
MOSFET N-CH 60V 100A TO220-3 |
![]() |
STL24NM60NSTMicroelectronics |
MOSFET N-CH 600V 16A POWERFLAT |
![]() |
SI2318DS-T1-E3Vishay / Siliconix |
MOSFET N-CH 40V 3A SOT23-3 |
![]() |
DMT6017LFV-7Zetex Semiconductors (Diodes Inc.) |
MOSFET N-CH 65V 36A POWERDI3333 |
![]() |
BUK9508-55B,127Rochester Electronics |
MOSFET N-CH 55V 75A TO220AB |
![]() |
BUK9832-55A/CUXNexperia |
MOSFET N-CH 55V 12A SOT223 |