







 
                            CRYSTAL 29.4912MHZ 4PF SMD
 
                            MOSFET N-CH 30V 9.7A/48A 5DFN
 
                            COMP O= .480,L= 2.75,W= .081
 
                            IC FLASH LPDRAM 6G 130VFBGA
| 类型 | 描述 | 
|---|---|
| 系列: | - | 
| 包裹: | Bulk | 
| 零件状态: | Active | 
| 场效应管类型: | N-Channel | 
| 技术: | MOSFET (Metal Oxide) | 
| 漏源电压 (vdss): | 30 V | 
| 电流 - 连续漏极 (id) @ 25°c: | 9.7A (Ta), 48A (Tc) | 
| 驱动电压(最大 rds on,最小 rds on): | 4.5V, 10V | 
| rds on (max) @ id, vgs: | 5.6mOhm @ 30A, 10V | 
| vgs(th) (最大值) @ id: | 2.2V @ 250µA | 
| 栅极电荷 (qg) (max) @ vgs: | 21.5 nC @ 10 V | 
| vgs (最大值): | ±20V | 
| 输入电容 (ciss) (max) @ vds: | 1.264 pF @ 15 V | 
| 场效应管特征: | - | 
| 功耗(最大值): | 920mW (Ta), 23.2W (Tc) | 
| 工作温度: | -55°C ~ 150°C (TJ) | 
| 安装类型: | Surface Mount | 
| 供应商设备包: | 5-DFN (5x6) (8-SOFL) | 
| 包/箱: | 8-PowerTDFN, 5 Leads | 
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
|   | AOW292Alpha and Omega Semiconductor, Inc. | MOSFET N-CH 100V 105A TO262 | 
|   | SIS822DNT-T1-GE3Vishay / Siliconix | MOSFET N-CH 30V 12A PPAK1212-8 | 
|   | IRL7833SPBFRochester Electronics | MOSFET N-CH 30V 150A D2PAK | 
|   | SSM3K127TU,LFToshiba Electronic Devices and Storage Corporation | MOSFET N-CH 30V 2A UFM | 
|   | DKI04046Sanken Electric Co., Ltd. | MOSFET N-CH 40V 48A TO252 | 
|   | SI7110DN-T1-E3Vishay / Siliconix | MOSFET N-CH 20V 13.5A PPAK1212-8 | 
|   | IPA032N06N3GXKSA1IR (Infineon Technologies) | MOSFET N-CH 60V 84A TO220-3-31 | 
|   | FDH45N50F-F133Sanyo Semiconductor/ON Semiconductor | MOSFET N-CH 500V 45A TO247-3 | 
|   | IRLML9303TRPBFIR (Infineon Technologies) | MOSFET P-CH 30V 2.3A SOT23 | 
|   | DMN24H11DSQ-7Zetex Semiconductors (Diodes Inc.) | MOSFET N-CH 240V 270MA SOT23 T&R | 
|   | BUK7M17-80EXNexperia | MOSFET N-CH 80V 43A LFPAK33 | 
|   | AUIRFS4115TRLIR (Infineon Technologies) | MOSFET N-CH 150V 99A D2PAK | 
|   | SIR474DP-T1-GE3Vishay / Siliconix | MOSFET N-CH 30V 20A PPAK SO-8 |