







 
                            MOSFET N-CH 40V 20.7A 8SOIC
 
                            CONN HEADER R/A 22POS 3MM
| 类型 | 描述 | 
|---|---|
| 系列: | Automotive, AEC-Q101, TrenchFET® | 
| 包裹: | Tape & Reel (TR)Cut Tape (CT) | 
| 零件状态: | Active | 
| 场效应管类型: | N-Channel | 
| 技术: | MOSFET (Metal Oxide) | 
| 漏源电压 (vdss): | 40 V | 
| 电流 - 连续漏极 (id) @ 25°c: | 20.7A (Tc) | 
| 驱动电压(最大 rds on,最小 rds on): | 4.5V, 10V | 
| rds on (max) @ id, vgs: | 9mOhm @ 14A, 10V | 
| vgs(th) (最大值) @ id: | 2.5V @ 250µA | 
| 栅极电荷 (qg) (max) @ vgs: | 62 nC @ 10 V | 
| vgs (最大值): | ±20V | 
| 输入电容 (ciss) (max) @ vds: | 2440 pF @ 20 V | 
| 场效应管特征: | - | 
| 功耗(最大值): | 7.1W (Tc) | 
| 工作温度: | -55°C ~ 175°C (TJ) | 
| 安装类型: | Surface Mount | 
| 供应商设备包: | 8-SOIC | 
| 包/箱: | 8-SOIC (0.154", 3.90mm Width) | 
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
|   | STB11NM80T4STMicroelectronics | MOSFET N-CH 800V 11A D2PAK | 
|   | AUIRLS8409-7PIR (Infineon Technologies) | MOSFET N-CH 40V 240A D2PAK | 
|   | FDS86106Sanyo Semiconductor/ON Semiconductor | MOSFET N-CH 100V 3.4A 8SOIC | 
|   | IPP80N04S304AKSA1Rochester Electronics | N-CHANNEL POWER MOSFET | 
|   | NTTFS4C05NTWGSanyo Semiconductor/ON Semiconductor | MOSFET N-CH 30V 12A/75A 8WDFN | 
|   | IRFI7536GPBF-IRRochester Electronics | HEXFET N-CHANNEL POWER MOSFET | 
|   | SIS429DNT-T1-GE3Vishay / Siliconix | MOSFET P-CH 30V 20A PPAK1212-8 | 
|   | UPA2709AGR-E1-ATRochester Electronics | MOSFET N-CH 30V 13A 8PSOP | 
|   | BSH108,215Nexperia | MOSFET N-CH 30V 1.9A TO236AB | 
|   | IPA60R165CPRochester Electronics | MOSFET N-CH 600V 21A TO220 | 
|   | PHK13N03LT,518Rochester Electronics | MOSFET N-CH 30V 13.8A 8SO | 
|   | SI5403DC-T1-GE3Vishay / Siliconix | MOSFET P-CH 30V 6A 1206-8 | 
|   | FDP053N08B-F102Sanyo Semiconductor/ON Semiconductor | MOSFET N-CH 80V 75A TO220-3 |