English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | HEXFET® |
| 包裹: | Tape & Reel (TR)Cut Tape (CT) |
| 零件状态: | Active |
| 场效应管类型: | N-Channel |
| 技术: | MOSFET (Metal Oxide) |
| 漏源电压 (vdss): | 30 V |
| 电流 - 连续漏极 (id) @ 25°c: | 1.2A (Ta) |
| 驱动电压（最大 rds on，最小 rds on）: | 4.5V, 10V |
| rds on (max) @ id, vgs: | 250mOhm @ 910mA, 10V |
| vgs(th) (最大值) @ id: | 1V @ 250µA |
| 栅极电荷 (qg) (max) @ vgs: | 5 nC @ 10 V |
| vgs (最大值): | ±20V |
| 输入电容 (ciss) (max) @ vds: | 85 pF @ 25 V |
| 场效应管特征: | - |
| 功耗（最大值）: | 540mW (Ta) |
| 工作温度: | -55°C ~ 150°C (TJ) |
| 安装类型: | Surface Mount |
| 供应商设备包: | Micro3™/SOT-23 |
| 包/箱: | TO-236-3, SC-59, SOT-23-3 |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
APT20M18B2VFRGRoving Networks / Microchip Technology |
MOSFET N-CH 200V 100A T-MAX |
|
NX138BKMYLNexperia |
MOSFET N-CH 60V 380MA DFN1006-3 |
|
RQ3E110AJTBROHM Semiconductor |
MOSFET N-CH 30V 11A/24A 8HSMT |
|
FQP65N06Sanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 60V 65A TO220-3 |
|
IRFF223Rochester Electronics |
N-CHANNEL POWER MOSFET |
|
FDPF6N60ZUTRochester Electronics |
MOSFET N-CH 600V 4.5A TO220F |
|
TK16E60W,S1VXToshiba Electronic Devices and Storage Corporation |
MOSFET N-CH 600V 15.8A TO220 |
|
SIR404DP-T1-GE3Vishay / Siliconix |
MOSFET N-CH 20V 60A PPAK SO-8 |
|
DMTH6010LPS-13Zetex Semiconductors (Diodes Inc.) |
MOSFET N-CH 60V 13.5A PWRDI5060 |
|
IRL2910PBFIR (Infineon Technologies) |
MOSFET N-CH 100V 55A TO220AB |
|
IXFH230N10TWickmann / Littelfuse |
MOSFET N-CH 100V 230A TO247AD |
|
STWA45N65M5STMicroelectronics |
MOSFET N-CH 650V 35A TO247 |
|
SQD50P08-25L_GE3Vishay / Siliconix |
MOSFET P-CH 80V 50A TO252AA |
