English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | TrenchMOS™ |
| 包裹: | Tube |
| 零件状态: | Obsolete |
| 场效应管类型: | N-Channel |
| 技术: | MOSFET (Metal Oxide) |
| 漏源电压 (vdss): | 60 V |
| 电流 - 连续漏极 (id) @ 25°c: | 120A (Tc) |
| 驱动电压（最大 rds on，最小 rds on）: | 5V, 10V |
| rds on (max) @ id, vgs: | 2.6mOhm @ 25A, 10V |
| vgs(th) (最大值) @ id: | 2.1V @ 1mA |
| 栅极电荷 (qg) (max) @ vgs: | 120 nC @ 5 V |
| vgs (最大值): | ±10V |
| 输入电容 (ciss) (max) @ vds: | 17.45 pF @ 25 V |
| 场效应管特征: | - |
| 功耗（最大值）: | 349W (Tc) |
| 工作温度: | -55°C ~ 175°C (TJ) |
| 安装类型: | Through Hole |
| 供应商设备包: | I2PAK |
| 包/箱: | TO-262-3 Long Leads, I²Pak, TO-262AA |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
STD7N60DM2STMicroelectronics |
MOSFET N-CH 600V 6A DPAK |
|
DMN3023L-7Zetex Semiconductors (Diodes Inc.) |
MOSFET N-CH 30V 6.2A SOT23 |
|
BUK9M24-60EXNexperia |
MOSFET N-CH 60V 32A LFPAK33 |
|
TK9A90E,S4XToshiba Electronic Devices and Storage Corporation |
MOSFET N-CH 900V 9A TO220SIS |
|
IRFBC30PBFVishay / Siliconix |
MOSFET N-CH 600V 3.6A TO220AB |
|
UF3C120150K3SUnitedSiC |
SICFET N-CH 1200V 18.4A TO247-3 |
|
FDMS86500LSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 60V 25A/80A 8PQFN |
|
2SK2133-AZRochester Electronics |
N-CHANNEL POWER MOSFET |
|
IRLR7821TRPBFRochester Electronics |
MOSFET N-CH 30V 65A DPAK |
|
DMT69M8LFV-13Zetex Semiconductors (Diodes Inc.) |
MOSFET N-CH 60V 45A POWERDI3333 |
|
PMN80XP,115Rochester Electronics |
MOSFET P-CH 20V 2.5A 6TSOP |
|
FDMA507PZSanyo Semiconductor/ON Semiconductor |
MOSFET P-CH 20V 7.8A 6MICROFET |
|
FDD8445-F085Rochester Electronics |
15.2A, 40V, 0.0087OHM, N-CHANNE |
