English
简体中文
CAP CER 27PF 500V C0G/NP0 2220
CAP CER 2.1PF 25V NP0 0805
IRLR3802 - HEXFET POWER MOSFET
COPPER PATCH CORD, CAT 6A (SD),
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | HEXFET® |
| 包裹: | Bulk |
| 零件状态: | Active |
| 场效应管类型: | N-Channel |
| 技术: | MOSFET (Metal Oxide) |
| 漏源电压 (vdss): | 12 V |
| 电流 - 连续漏极 (id) @ 25°c: | 84A (Tc) |
| 驱动电压（最大 rds on，最小 rds on）: | 2.8V, 4.5V |
| rds on (max) @ id, vgs: | 8.5mOhm @ 15A, 4.5V |
| vgs(th) (最大值) @ id: | 1.9V @ 250µA |
| 栅极电荷 (qg) (max) @ vgs: | 41 nC @ 5 V |
| vgs (最大值): | ±12V |
| 输入电容 (ciss) (max) @ vds: | 2.49 pF @ 6 V |
| 场效应管特征: | - |
| 功耗（最大值）: | 88W (Tc) |
| 工作温度: | -55°C ~ 175°C (TJ) |
| 安装类型: | Surface Mount |
| 供应商设备包: | D-Pak |
| 包/箱: | TO-252-3, DPak (2 Leads + Tab), SC-63 |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
SQ2389ES-T1_GE3Vishay / Siliconix |
MOSFET P-CH 40V 4.1A SOT23-3 |
|
FDS6900SRochester Electronics |
N-CHANNEL POWER MOSFET |
|
SISS73DN-T1-GE3Vishay / Siliconix |
MOSFET P-CH 150V 4.4A/16.2A PPAK |
|
STP4LN80K5STMicroelectronics |
MOSFET N-CHANNEL 800V 3A TO220 |
|
NTB6413ANT4GSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 100V 42A D2PAK |
|
DN2450N8-GRoving Networks / Microchip Technology |
MOSFET N-CH 500V 230MA TO243AA |
|
STI22NM60NSTMicroelectronics |
MOSFET N-CH 600V 16A I2PAK |
|
IRFH7110TRPBFRochester Electronics |
MOSFET N-CH 100V 11A/58A 8PQFN |
|
DMT68M8LPS-13Zetex Semiconductors (Diodes Inc.) |
MOSFET N-CH 60V PWRDI5060 |
|
DIT090N06Diotec Semiconductor |
MOSFET N-CH 65V 90A TO220AB |
|
RTU002P02T106ROHM Semiconductor |
MOSFET P-CH 20V 250MA UMT3 |
|
FDD86252Sanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 150V 5A/27A DPAK |
|
STL8N6F7STMicroelectronics |
MOSFET N-CH 60V 36A POWERFLAT |