English
简体中文
POWER FIELD-EFFECT TRANSISTOR, 6
MOSFET P-CH 30V 3.8A 8SO
IC REG LINEAR STEP UP SWITCHING
ACTIVE-MATRIX LCD SUPPLY
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Tape & Reel (TR)Cut Tape (CT) |
| 零件状态: | Active |
| 场效应管类型: | P-Channel |
| 技术: | MOSFET (Metal Oxide) |
| 漏源电压 (vdss): | 30 V |
| 电流 - 连续漏极 (id) @ 25°c: | 3.8A (Ta) |
| 驱动电压（最大 rds on，最小 rds on）: | 4.5V, 10V |
| rds on (max) @ id, vgs: | 70mOhm @ 5.3A, 10V |
| vgs(th) (最大值) @ id: | 3V @ 250µA |
| 栅极电荷 (qg) (max) @ vgs: | 5.2 nC @ 4.5 V |
| vgs (最大值): | ±20V |
| 输入电容 (ciss) (max) @ vds: | 563 pF @ 25 V |
| 场效应管特征: | - |
| 功耗（最大值）: | 1.3W (Ta) |
| 工作温度: | -55°C ~ 150°C (TJ) |
| 安装类型: | Surface Mount |
| 供应商设备包: | 8-SO |
| 包/箱: | 8-SOIC (0.154", 3.90mm Width) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
NTMFS4835NT3GRochester Electronics |
MOSFET N-CH 30V 13A/130A 5DFN |
|
APT20M11JVFRRoving Networks / Microchip Technology |
MOSFET N-CH 200V 175A ISOTOP |
|
TBB1010KMTL-HRochester Electronics |
RF N-CHANNEL MOSFET |
|
IMBG120R045M1HXTMA1IR (Infineon Technologies) |
TRANS SJT N-CH 1.2KV 47A TO263 |
|
TSM033NB04CR RLGTSC (Taiwan Semiconductor) |
MOSFET N-CH 40V 21A/121A 8PDFN |
|
NVMFS5C404NAFT1GSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 40V 53A/378A 5DFN |
|
AO4486Alpha and Omega Semiconductor, Inc. |
MOSFET N-CH 100V 4.2A 8SOIC |
|
STFI20N65M5STMicroelectronics |
MOSFET N CH 650V 18A I2PAKFP |
|
FDBL9403-F085Rochester Electronics |
MOSFET N-CH 40V 240A 8HPSOF |
|
AO3416Alpha and Omega Semiconductor, Inc. |
MOSFET N-CH 20V 6.5A SOT23-3L |
|
BUK7C10-75AITE,118Rochester Electronics |
MOSFET N-CH 75V 75A D2PAK |
|
MCAC30N06Y-TPMicro Commercial Components (MCC) |
MOSFET N-CH 60V 30A DFN5060 |
|
APT50M85JVRRoving Networks / Microchip Technology |
MOSFET N-CH 500V 50A ISOTOP |