类型 | 描述 |
---|---|
系列: | STripFET™ V |
包裹: | Tube |
零件状态: | Obsolete |
场效应管类型: | N-Channel |
技术: | MOSFET (Metal Oxide) |
漏源电压 (vdss): | 30 V |
电流 - 连续漏极 (id) @ 25°c: | 80A (Tc) |
驱动电压(最大 rds on,最小 rds on): | 5V, 10V |
rds on (max) @ id, vgs: | 5.4mOhm @ 40A, 10V |
vgs(th) (最大值) @ id: | 2.5V @ 250µA |
栅极电荷 (qg) (max) @ vgs: | 14 nC @ 5 V |
vgs (最大值): | ±22V |
输入电容 (ciss) (max) @ vds: | 1850 pF @ 25 V |
场效应管特征: | - |
功耗(最大值): | 70W (Tc) |
工作温度: | 175°C (TJ) |
安装类型: | Through Hole |
供应商设备包: | TO-220AB |
包/箱: | TO-220-3 |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
STFU9N65M2STMicroelectronics |
MOSFET N-CH 650V 5A TO220FP |
|
AUIRFZ46NLRochester Electronics |
AUTOMOTIVE HEXFET N CHANNEL |
|
IRLI3705NPBFIR (Infineon Technologies) |
MOSFET N-CH 55V 52A TO220AB FP |
|
IPD082N10N3GATMA1IR (Infineon Technologies) |
MOSFET N-CH 100V 80A TO252-3 |
|
FQA28N15Sanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 150V 33A TO3PN |
|
SISS67DN-T1-GE3Vishay / Siliconix |
MOSFET P-CH 30V 60A PPAK1212-8S |
|
STW15NM60NSTMicroelectronics |
MOSFET N-CH 600V 14A TO247-3 |
|
YJL3416A-F2-0100HF |
N-CH MOSFET 20V 7A SOT-23-3L |
|
IXFN110N60P3Wickmann / Littelfuse |
MOSFET N-CH 600V 90A SOT227B |
|
AO4403Alpha and Omega Semiconductor, Inc. |
MOSFET P-CH 30V 6A 8SOIC |
|
HUF76113SK8Rochester Electronics |
N-CHANNEL POWER MOSFET |
|
NTMFS4120NT1GRochester Electronics |
MOSFET N-CH 30V 11A 5DFN |
|
SIHD690N60E-GE3Vishay / Siliconix |
MOSFET N-CH 600V 6.4A DPAK |