类型 | 描述 |
---|---|
系列: | - |
包裹: | Tube |
零件状态: | Active |
场效应管类型: | N-Channel |
技术: | MOSFET (Metal Oxide) |
漏源电压 (vdss): | 600 V |
电流 - 连续漏极 (id) @ 25°c: | 29A (Tc) |
驱动电压(最大 rds on,最小 rds on): | 10V |
rds on (max) @ id, vgs: | 125mOhm @ 15A, 10V |
vgs(th) (最大值) @ id: | 4V @ 250µA |
栅极电荷 (qg) (max) @ vgs: | 130 nC @ 10 V |
vgs (最大值): | ±30V |
输入电容 (ciss) (max) @ vds: | 2600 pF @ 100 V |
场效应管特征: | - |
功耗(最大值): | 250W (Tc) |
工作温度: | -55°C ~ 150°C (TJ) |
安装类型: | Surface Mount |
供应商设备包: | D2PAK |
包/箱: | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
AOTF7N70Alpha and Omega Semiconductor, Inc. |
MOSFET N-CH 700V 7A TO220-3F |
|
IPD031N06L3GATMA1IR (Infineon Technologies) |
MOSFET N-CH 60V 100A TO252-3 |
|
BSC096N10LS5ATMA1IR (Infineon Technologies) |
MOSFET N-CH 100V 40A TDSON-8-6 |
|
IRFR2307ZPBFRochester Electronics |
MOSFET N-CH 75V 42A DPAK |
|
SI3421DV-T1-GE3Vishay / Siliconix |
MOSFET P-CH 30V 8A 6TSOP |
|
BSC079N03LSCGATMA1IR (Infineon Technologies) |
MOSFET N-CH 30V 14A/50A TDSON |
|
IRL3705ZPBFIR (Infineon Technologies) |
MOSFET N-CH 55V 75A TO220AB |
|
PSMN1R8-40YLC,115Nexperia |
MOSFET N-CH 40V 100A LFPAK56 |
|
IXTA26P20PWickmann / Littelfuse |
MOSFET P-CH 200V 26A TO263 |
|
SIHH21N65E-T1-GE3Vishay / Siliconix |
MOSFET N-CH 650V 20.3A PPAK 8X8 |
|
DMN22M5UFG-7Zetex Semiconductors (Diodes Inc.) |
MOSFET N-CH 20V 27A POWERDI3333 |
|
STD5N62K3STMicroelectronics |
MOSFET N-CH 620V 4.2A DPAK |
|
SQM40016EM_GE3Vishay / Siliconix |
MOSFET N-CH 40V 250A TO263-7 |