English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Tape & Reel (TR)Cut Tape (CT) |
| 零件状态: | Active |
| 场效应管类型: | P-Channel |
| 技术: | MOSFET (Metal Oxide) |
| 漏源电压 (vdss): | 30 V |
| 电流 - 连续漏极 (id) @ 25°c: | 25A (Ta) |
| 驱动电压（最大 rds on，最小 rds on）: | 4.5V, 10V |
| rds on (max) @ id, vgs: | 30mOhm @ 13A, 10V |
| vgs(th) (最大值) @ id: | - |
| 栅极电荷 (qg) (max) @ vgs: | 18.5 nC @ 10 V |
| vgs (最大值): | ±20V |
| 输入电容 (ciss) (max) @ vds: | 875 pF @ 10 V |
| 场效应管特征: | - |
| 功耗（最大值）: | 30W (Tc) |
| 工作温度: | 150°C (TJ) |
| 安装类型: | Surface Mount |
| 供应商设备包: | ATPAK |
| 包/箱: | ATPAK (2 leads+tab) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
CSD22205LTexas Instruments |
MOSFET P-CH 8V 7.4A 4PICOSTAR |
|
IRL2910STRLPBFIR (Infineon Technologies) |
MOSFET N-CH 100V 55A D2PAK |
|
FDB42AN15A0-F085Rochester Electronics |
MOSFET N-CH 150V 35A D2PAK |
|
IPD135N03LGRochester Electronics |
OPTLMOS N-CHANNEL POWER MOSFET |
|
IXTA6N50D2-TRLWickmann / Littelfuse |
MOSFET N-CH 500V 6A TO263 |
|
APT30M19JVRRoving Networks / Microchip Technology |
MOSFET N-CH 300V 130A ISOTOP |
|
FDMC7678Sanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 30V 17.5A/19.5A 8MLP |
|
NTP18N06LRochester Electronics |
MOSFET N-CH 60V 15A TO220AB |
|
AOSP21307Alpha and Omega Semiconductor, Inc. |
MOSFET P-CH 30V 14A 8SOIC |
|
STH175N4F6-2AGSTMicroelectronics |
MOSFET N-CH 40V 120A H2PAK-2 |
|
FQPF6N40CFRochester Electronics |
MOSFET N-CH 400V 6A TO220F |
|
SUP10250E-GE3Vishay / Siliconix |
MOSFET N-CH 250V 63A TO220AB |
|
IRF2807STRLPBFIR (Infineon Technologies) |
MOSFET N-CH 75V 82A D2PAK |
