English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | PolarP™ |
| 包裹: | Tube |
| 零件状态: | Active |
| 场效应管类型: | P-Channel |
| 技术: | MOSFET (Metal Oxide) |
| 漏源电压 (vdss): | 100 V |
| 电流 - 连续漏极 (id) @ 25°c: | 170A (Tc) |
| 驱动电压（最大 rds on，最小 rds on）: | 10V |
| rds on (max) @ id, vgs: | 12mOhm @ 500mA, 10V |
| vgs(th) (最大值) @ id: | 4V @ 1mA |
| 栅极电荷 (qg) (max) @ vgs: | 240 nC @ 10 V |
| vgs (最大值): | ±20V |
| 输入电容 (ciss) (max) @ vds: | 12600 pF @ 25 V |
| 场效应管特征: | - |
| 功耗（最大值）: | 890W (Tc) |
| 工作温度: | -55°C ~ 150°C (TJ) |
| 安装类型: | Through Hole |
| 供应商设备包: | TO-264 (IXTK) |
| 包/箱: | TO-264-3, TO-264AA |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
BSP170PL6327HTSA1Rochester Electronics |
MOSFET P-CH 60V 1.9A SOT223-4 |
|
STD15N60M2-EPSTMicroelectronics |
MOSFET N-CH 600V 11A DPAK |
|
PSMN6R1-30YLD115Rochester Electronics |
N-CHANNEL POWER MOSFET |
|
IRF7470TRPBFIR (Infineon Technologies) |
MOSFET N-CH 40V 10A 8SO |
|
IRF7241TRPBFIR (Infineon Technologies) |
MOSFET P-CH 40V 6.2A 8SO |
|
BSS138WSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 50V 210MA SC70 |
|
IPW90R500C3XKSA1IR (Infineon Technologies) |
MOSFET N-CH 900V 11A TO247-3 |
|
SUP40N25-60-E3Vishay / Siliconix |
MOSFET N-CH 250V 40A TO220AB |
|
DMP4065SQ-7Zetex Semiconductors (Diodes Inc.) |
MOSFET P-CH 40V 2.4A SOT23 T&R |
|
NTD40N03R-001Rochester Electronics |
MOSFET N-CH 25V 45A IPAK |
|
NTD70N03RGRochester Electronics |
MOSFET N-CH 25V 10A/32A DPAK |
|
IRFP90N20DPBFIR (Infineon Technologies) |
MOSFET N-CH 200V 94A TO247AC |
|
DMP2078LCA3-7Zetex Semiconductors (Diodes Inc.) |
MOSFET P-CH 20V 3.4A X4DSN1006-3 |
