类型 | 描述 |
---|---|
系列: | PowerTrench® |
包裹: | Bulk |
零件状态: | Obsolete |
场效应管类型: | N-Channel |
技术: | MOSFET (Metal Oxide) |
漏源电压 (vdss): | 200 V |
电流 - 连续漏极 (id) @ 25°c: | 4.9A (Ta) |
驱动电压(最大 rds on,最小 rds on): | 10V |
rds on (max) @ id, vgs: | 720mOhm @ 1.5A, 10V |
vgs(th) (最大值) @ id: | 4.5V @ 250µA |
栅极电荷 (qg) (max) @ vgs: | 11 nC @ 10 V |
vgs (最大值): | ±20V |
输入电容 (ciss) (max) @ vds: | 234 pF @ 100 V |
场效应管特征: | - |
功耗(最大值): | 42W (Ta) |
工作温度: | -55°C ~ 175°C (TJ) |
安装类型: | Surface Mount |
供应商设备包: | TO-252 |
包/箱: | TO-252-3, DPak (2 Leads + Tab), SC-63 |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
NP89N055PUK-E1-AYRenesas Electronics America |
MOSFET N-CH 55V 90A TO263-3 |
|
HUF76139S3STRochester Electronics |
N-CHANNEL POWER MOSFET |
|
NTD4906NT4GRochester Electronics |
30V 54A, SINGLE N-CHANNEL |
|
AOK20N60LAlpha and Omega Semiconductor, Inc. |
MOSFET N-CH 600V 20A TO247 |
|
NTD4815NH-1GRochester Electronics |
MOSFET N-CH 30V 6.9A/35A IPAK |
|
FQB13N06LTMRochester Electronics |
MOSFET N-CH 60V 13.6A D2PAK |
|
RRL035P03FRATRROHM Semiconductor |
MOSFET P-CH 30V 3.5A TUMT6 |
|
IPB60R380C6ATMA1IR (Infineon Technologies) |
MOSFET N-CH 600V 10.6A D2PAK |
|
SIR401DP-T1-GE3Vishay / Siliconix |
MOSFET P-CH 20V 50A PPAK SO-8 |
|
FQD4P40TMSanyo Semiconductor/ON Semiconductor |
MOSFET P-CH 400V 2.7A DPAK |
|
IPP80N08S406AKSA1Rochester Electronics |
MOSFET N-CH 80V 80A TO220-3-1 |
|
US5U2TRROHM Semiconductor |
MOSFET N-CH 30V 1.4A TUMT5 |
|
SIS434DN-T1-GE3Vishay / Siliconix |
MOSFET N-CH 40V 35A PPAK 1212-8 |