English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Bulk |
| 零件状态: | Obsolete |
| 场效应管类型: | N-Channel |
| 技术: | MOSFET (Metal Oxide) |
| 漏源电压 (vdss): | 30 V |
| 电流 - 连续漏极 (id) @ 25°c: | 13A (Ta), 93A (Tc) |
| 驱动电压（最大 rds on，最小 rds on）: | 4.5V, 10V |
| rds on (max) @ id, vgs: | 3.2mOhm @ 30A, 10V |
| vgs(th) (最大值) @ id: | 2V @ 250µA |
| 栅极电荷 (qg) (max) @ vgs: | 49.4 nC @ 10 V |
| vgs (最大值): | ±20V |
| 输入电容 (ciss) (max) @ vds: | 4.85 pF @ 15 V |
| 场效应管特征: | - |
| 功耗（最大值）: | 930mW (Ta), 48W (Tc) |
| 工作温度: | -55°C ~ 150°C (TJ) |
| 安装类型: | Surface Mount |
| 供应商设备包: | 5-DFN (5x6) (8-SOFL) |
| 包/箱: | 8-PowerTDFN, 5 Leads |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
SIS780DN-T1-GE3Vishay / Siliconix |
MOSFET N-CH 30V 18A PPAK1212-8 |
|
NTMFS4927NT3GSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 30V 7.9A/38A 5DFN |
|
AOB27S60LAlpha and Omega Semiconductor, Inc. |
MOSFET N-CH 600V 27A TO263 |
|
IPP120N10S405AKSA1IR (Infineon Technologies) |
MOSFET N-CH 100V 120A TO220-3 |
|
DMN1019UVT-13Zetex Semiconductors (Diodes Inc.) |
MOSFET N-CH 12V 10.7A TSOT26 |
|
TK35A65W,S5XToshiba Electronic Devices and Storage Corporation |
MOSFET N-CH 650V 35A TO220SIS |
|
STP42N60M2-EPSTMicroelectronics |
MOSFET N-CH 600V 34A TO220 |
|
IRFR1N60APBFVishay / Siliconix |
MOSFET N-CH 600V 1.4A DPAK |
|
TPWR8004PL,L1QToshiba Electronic Devices and Storage Corporation |
MOSFET N-CH 40V 150A 8DSOP |
|
BUK7880-55A/CUXNexperia |
MOSFET N-CH 55V 7A SOT223 |
|
FDPF16N50TSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 500V 16A TO220F |
|
R6511ENJTLROHM Semiconductor |
MOSFET N-CH 650V 11A LPTS |
|
IXTH10N100DWickmann / Littelfuse |
MOSFET N-CH 1000V 10A TO247 |
