CAP CER 33PF 50V X7R 1808
9MM HG/G PMI-12VDC W/O-RING
MOSFET N-CH 950V 9A TO252-3
IC 4X4 REGISTER FILE 3ST 16SOIC
类型 | 描述 |
---|---|
系列: | CoolMOS™ P7 |
包裹: | Tape & Reel (TR)Cut Tape (CT) |
零件状态: | Active |
场效应管类型: | N-Channel |
技术: | MOSFET (Metal Oxide) |
漏源电压 (vdss): | 950 V |
电流 - 连续漏极 (id) @ 25°c: | 9A (Tc) |
驱动电压(最大 rds on,最小 rds on): | 10V |
rds on (max) @ id, vgs: | 750mOhm @ 4.5A, 10V |
vgs(th) (最大值) @ id: | 3.5V @ 220µA |
栅极电荷 (qg) (max) @ vgs: | 23 nC @ 10 V |
vgs (最大值): | ±20V |
输入电容 (ciss) (max) @ vds: | 712 pF @ 400 V |
场效应管特征: | - |
功耗(最大值): | 73W (Tc) |
工作温度: | -55°C ~ 150°C (TJ) |
安装类型: | Surface Mount |
供应商设备包: | PG-TO252-3 |
包/箱: | TO-252-3, DPak (2 Leads + Tab), SC-63 |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
FDS6670ASRochester Electronics |
SMALL SIGNAL FIELD-EFFECT TRANSI |
|
CSD16406Q3Texas Instruments |
MOSFET N-CH 25V 19A/60A 8VSON |
|
AO3434AAlpha and Omega Semiconductor, Inc. |
MOSFET N-CH 30V 4A SOT23-3L |
|
IXFR180N15PWickmann / Littelfuse |
MOSFET N-CH 150V 100A ISOPLUS247 |
|
IPD640N06LGBTMA1IR (Infineon Technologies) |
MOSFET N-CH 60V 18A TO252-3 |
|
TK1K2A60F,S4XToshiba Electronic Devices and Storage Corporation |
MOSFET N-CH 600V 6A TO220SIS |
|
STB60NF10-1STMicroelectronics |
MOSFET N-CH 100V 80A I2PAK |
|
NP32N055SHE-E1-AYRochester Electronics |
MOSFET N-CH 55V 32A TO252 |
|
IPD60R280P7SE8228AUMA1IR (Infineon Technologies) |
MOSFET N-CH 600V 12A TO252-3 |
|
AOTF10N60Alpha and Omega Semiconductor, Inc. |
MOSFET N-CH 600V 10A TO220-3F |
|
BUK962R8-30B,118Nexperia |
MOSFET N-CH 30V 75A D2PAK |
|
IRLR2908TRLPBFRochester Electronics |
IRLR2908 - HEXFET POWER MOSFET |
|
IPB60R070CFD7ATMA1IR (Infineon Technologies) |
MOSFET N-CH 650V 31A TO263-3-2 |